Browsing by Subject "Phase interfaces"
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Item Open Access Dynamics of commitment and contribution quality in collaborative communities(IEEE, 2007-11) Schaal, Markus; Eren, Y.It is well-known that commitment is an important ingredient for contributions of high quality. With the internet heading towards being an actionable social space, rather than a collection of web-sites, the issue of quality becomes crucial for sharing knowledge and action in collaborative scenarios. We propose a case study for the investigation of the influence of time, user feedback and interface complexity on contribution quality. We plan to exploit different online user groups across two different temporal phases for the evaluation.Item Open Access An ontology-based universal design knowledge support system(Elsevier, 2011-05) Afacan, Yasemin; Demirkan, H.An effective and efficient knowledge support system is crucial for universal design process, as it has become a major design issue in the last decade with the growth of the elderly population and disabled people. There are a limited number of CAD investigations on the nature of knowledge processing that supports the cognitive activities of universal design process. Therefore, this paper proposes an ontology-based computer-assisted universal design (CAUD) plug-in tool that supports designers in developing satisfactory universal design solutions in the conceptual design phase. The required knowledge processing and representation of the developed tool is motivated by the ontological language. It is based on the multiple divergence-convergence cognitive strategies and cognitive needs of designers in the analysis/synthesis/evaluation operations. The CAUD plug-in tool is the first attempt to interface the universal design knowledge ontologically and respond to the requirements of conceptual design phase. According to the user acceptance study, the tool is assessed as useful, understandable, efficient, supportive and satisfactory.Item Open Access Perfectly absorbing ultra thin interference coatings for hydrogen sensing(OSA - The Optical Society, 2016) Serhatlioglu, M.; Ayas S.; Bıyıklı, Necmi; Dana, A.; Solmaz, M. E.Here we numerically demonstrate a straightforward method for optical detection of hydrogen gas by means of absorption reduction and colorimetric indication. A perfectly absorbing metal-insulator-metal (MIM) thin film interference structure is constructed using a silver metal back reflector, silicon dioxide insulator, and palladium as the upper metal layer and hydrogen catalyst. The thickness of silicon dioxide allows the maximizing of the electric field intensity at the Air/SiO2 interface at the quarter wavelengths and enabling perfect absorption with the help of highly absorptive palladium thin film (∼7 nm). While the exposure of the MIM structure to H2 moderately increases reflection, the relative intensity contrast due to formation of metal hydride is extensive. By modifying the insulator film thickness and hence the spectral absorption, the color is tuned and eye-visible results are obtained.Item Open Access Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method(American Institute of Physics, 2010-07-15) Lisesivdin, S. B.; Yildiz, A.; Balkan, N.; Kasap, M.; Ozcelik, S.; Özbay, EkmelWe carried out the temperature (22-350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al 0.22Ga0.78N/GaN heterostructures with AlN interlayer grown by metal-organic chemical-vapor deposition. Hall data is analyzed with a simple parallel conduction extraction method and temperature dependent mobility and carrier densities of the bulk and two-dimensional (2D) electrons are extracted successfully. The results for the bulk carriers are discussed using a theoretical model that includes the most important scattering mechanisms that contribute to the mobility. In order to investigate the mobility of two-dimensional electron gas, we used a theoretical model that takes into account the polar optical phonon scattering, acoustic phonon scattering, background impurity scattering, and interface roughness scattering in 2D. In these calculations, the values are used for the deformation potential and ionized impurity density values were obtained from the bulk scattering analysis. Therefore, the number of fitting parameters was reduced from four to two. © 2010 American Institute of Physics.