Browsing by Subject "Parasitic effect"
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Item Open Access Accurate and process-tolerant resistive load(IEEE, 2020) Sütbaş, Batuhan; Özbay, Ekmel; Atalar, AbdullahResistive terminations cannot preserve high-quality matching at high frequencies due to the parasitic effects of the nonideal resistor. Moreover, resistance values of the termination resistors in integrated circuits are subject to process variations. Therefore, it is difficult to obtain accurate and process-tolerant terminations that are crucial for high performance in microwave circuits. We propose a new resistive network that compensates for the high-frequency parasitic effects of the resistors to improve the bandwidth of the termination. In addition to maintaining accuracy, the presented network provides tolerance to variation in the resistor values. The accuracy and tolerance of the proposed structure is analytically shown and experimentally verified by three test structures at the X-band fabricated on a GaN technology. The experimental results show that a small size and wideband 50-Ω load with a return loss better than 25 dB can be obtained, while the resistor value changes ±30%.Item Open Access Accurate isolation networks in quadrature couplers and power dividers(IEEE, 2021) Sütbaş, Batuhan; Özbay, Ekmel; Atalar, AbdullahWhen quadrature couplers and power dividers are implemented in integrated circuits, accurate isolation networks can not be realized due to the nonideal resistors and the process variations. We present an isolation network design technique which cancels the resistor parasitic effects and also increases the tolerance to variations in the resistance values. A Lange coupler and a power divider are designed at Ka-band using the proposed accurate and process-tolerant isolation networks. The improvement is analytically shown and empirically verified with our in-house GaN-based microstrip MMIC process. For the coupler, the measured return losses and isolation are better than 20 dB from DC to 40 GHz. The power divider achieves 20 dB return losses and isolation in a fractional bandwidth of 50%. Both devices maintain 20 dB performance even when the variation in sheet resistance is as high as 30%.