Browsing by Subject "Parametric study"

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    A gPC-based approach to uncertain transonic aerodynamics
    (2010) Simon F.; Guillen P.; Sagaut P.; Lucor, D.
    The present paper focus on the stochastic response of a two-dimensional transonic airfoil to parametric uncertainties. Both the freestream Mach number and the angle of attack are considered as random parameters and the generalized Polynomial Chaos (gPC) theory is coupled with standard deterministic numerical simulations through a spectral collocation projection methodology. The results allow for a better understanding of the flow sensitivity to such uncertainties and underline the coupling process between the stochastic parameters. Two kinds of non-linearities are critical with respect to the skin-friction uncertainties: on one hand, the leeward shock movement characteristic of the supercritical profile and on the other hand, the boundary-layer separation on the aft part of the airfoil downstream the shock. The sensitivity analysis, thanks to the Sobol' decomposition, shows that a strong non-linear coupling exists between the uncertain parameters. Comparisons with the one-dimensional cases demonstrate that the multi-dimensional parametric study is required to get the correct shape and magnitude of the standard deviation distributions of the flow quantities such as pressure and skin-friction. © 2009 Elsevier B.V.
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    On the hole accelerator for III-nitride light-emitting diodes
    (American Institute of Physics Inc., 2016) Zhang Z.-H.; Zhang, Y.; Bi, W.; Geng, C.; Xu S.; Demir, Hilmi Volkan; Sun, X. W.
    In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1-xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1-xN layer, and the thickness for the p-GaN layer and the p-AlxGa1-xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1-xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1-xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1-xN design, and the hole accelerator can effectively increase the hole injection if properly designed.