Browsing by Subject "P-i-n photodiod"

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    High-speed high-efficiency resonant cavity enhanced photodiodes
    (Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States, 1999) Özbay, Ekmel; Kimukin, I.; Bıyıklı, N.; Aytür, O.; Gökkavas, M.; Ulu, G.; Ünlü, M. S.; Mirin, R. P.; Bertness, K. A.; Christensen, D. H.; Towe, E.; Tuttle, G.
    In this paper, we review our research efforts on RCE high-speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature.