Browsing by Subject "Order of magnitudes"

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    High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures
    (2009) Bando, M.; Ohashi, T.; Dede, M.; Akram, R.; Oral, A.; Park, S.Y.; Shibasaki I.; Handa H.; Sandhu, A.
    Further diversification of Hall sensor technology requires development of materials with high electron mobility and an ultrathin conducting layer very close to the material's surface. Here, we describe the magnetoresistive properties of micro-Hall devices fabricated using InAlSb/InAsSb/InAlSb heterostructures where electrical conduction was confined to a 30 nm-InAsSb two-dimensional electron gas layer. The 300 K electron mobility and sheet carrier concentration were 36 500 cm2 V-1 s-1 and 2.5× 1011 cm-2, respectively. The maximum current-related sensitivity was 2 750 V A-1 T-1, which was about an order of magnitude greater than AlGaAs/InGaAs pseudomorphic heterostructures devices. Photolithography was used to fabricate 1 μm×1 μm Hall probes, which were installed into a scanning Hall probe microscope and used to image the surface of a hard disk. © 2009 American Institute of Physics.
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    Vortex lattice of a Bose-Einstein condensate as a photonic band gap material
    (IOP Institute of Physics Publishing, 2009) Taşgin, M. E.; Müstecaplioǧlu, Ö. E.; Oktel, M. Ö.
    Photonic crystal behavior of a rotating Bose-Einstein condensate with a triangular vortex lattice is reviewed and a scheme for getting much wider band gaps is proposed. It is shown that photonic band gaps can be widened an order of magnitude more by using a Raman scheme of index enhancement, in comparison to previously considered upper level microwave scheme.