Browsing by Subject "Mismatch"

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Open Access
Electronic structure of low dimensional semiconductor systems
(1992) Gülseren, Oğuz
Recent progress made in the growth techniques has led to the fabrication of the artificial semiconductor systems of lower dimension. Electrons and holes in these materials have quantization different from those of the three dimensional systems presenting unusual electronic properties and novel device applications. In this work, the important features of the free carriers in semiconductor superlattices are examined, and the electronic structure of some novel 2D semiconductor systems are investigated theoretically. This thesis studies various systems of lower dimensionality such as: the strained Si/Ge superlattices, i-doping. Si (100) surface and the tip-sample interaction in scanning tunneling microscopy (STM) study of this surface, and Wannier-Stark localization in finite length superlattices. The electronic energy structure of pseudomorphic Ge„i/Si„ superlattices is investigated by using the empirical tight binding method. Effects of the band offset, sublattice periodicity and the lateral lattice constant on the transition energies have been investigated. It is found that Ge„i/Si„ superlattices grown on Ge (001) can have a direct band gap, if m + n = 10 and m = 6. However, optical matrix elements for in-plane and perpendicular polarized light are negligible for the transition from the highest valence band to the lowest conduction band state at the center of the superlattice Brillouin zone. The electronic structure of the Si i-layer in germanium is explored by using the Green’s function formalism with layer orbitals. We found two dimensional parabolic subbands near the band edges. This approach is extended to treat the electronic structure of a single quantum well without invoking the periodically repeating models. Quantum well formation in Ge,„Si„ superlattices is also studied by using different number of ^-layers. Subband structure is observed by changing the height of the Si quantum well. The confinement of acoustical modes within 2DEG due to only the electronphonon interaction is proposed. The confined modes split out from the bulk phonons, if the 2DEG is created by means of modulation doping. This occurs even if the lattice has uniform parameters. The effect is more pronounced when the wave vector q of the modes increases and is maximum a,t q = 2kp {kp is the Fermi wave vector). In the case of several electron sheets the additional features of the confinement effect appear. Green’s function method is also applied to treat the modifications of electronic state density in STM. The tip-sample interaction in STM study of Si (100) surface is explored by calculating the Gieen’s function within the empirical tight binding method. Both of the proposed reconstruction models, buckled and symmetrical dimer model, is investigated. A dip occurs in the change of density of states of surface atoms at the energy of surface states for small tip-sample distances, and it decreases with increasing tip-sample separation. Although, in-plane tip position (above the up- or down-surface atom) affects the surface atoms differently in buckled dimer model, it influences the surface atoms symmetrically in symmetric dimer model. Recent experimental studies revealed the significant information on the Wannier-Stark localization. Following these experimental results, the WannierStark ladder is investigated by carrying out numerical calculations on a multiple quantum well structure under an applied electric field. The variation of the Wannier-Stark ladder energies and localization of the corresponding wave II function are examined for a wide range of applied electric field. Our results show that Wannier-Stark ladder do exist for finite but periodic system which consists of a large number of quantum well having multi-miniband structure. It is found that the miniband states are localized in the well regions with the applied electric field, while the continuum states preserve their extended character. Energies of the well states show a linear shift with the electric field except the small field values in which a nonlinear shift is resulted. Multiband calculations show that there is a mixing between the different band states although they are localized in different well regions.
Open Access
Gain variation and noise figure degradation in balanced amplifiers
(2017-07) Coşkun, Akif Alperen
Although using balanced amplifiers in modern wireless communication systems has many advantages, the output and the noise response of the balanced ampli- fiers may vary from the expected value considerably due to the imperfections in the amplifier and the divider/combiner sections. First, we analyze the variation in the total gain of the balanced amplifiers using 2-way 0ff power dividers and 90ff couplers. In this context, mathematical analyses are made and analytical expressions are obtained to compare the two topologies. Analytical expressions show that the uncertainty in the total gain is more if the 90ff coupler is used in the balanced structure as opposed to a 2-way 0ff power divider for the same return loss/isolation values. Then, we present exact and approximate analytical results for the noise figure and noise parameters of the balanced amplifier in divider topology by using the noise waves. By the help of the noise wave approach, the output noise powers generated by each element in the balanced amplifier are derived. Y-parameters are used to determine the noise waves and the correlation matrix of the divider whereas the noise parameters are used to write the noise waves of the amplifier. Balanced amplifiers suffer in the noise figure performance in comparison to a stand-alone amplifier even with an ideal input divider. The noise parameters degrade further with an imperfect divider. Not only the nonzero return loss and the isolation but also the ohmic loss, amplitude and phase imbalances are considered. Besides, non-zero optimal source impedance affects the noise parameters of the balanced amplifier. Measurement results are also presented as a verification.
Open Access
Noise figure degradation in balanced amplifiers
(Institute of Electrical and Electronics Engineers Inc., 2017) Coskun, A. A.; Atalar, Abdullah
Balanced amplifiers suffer from the noise figure performance in comparison with a stand-alone amplifier even with an ideal input divider. The noise parameters degrade further with an imperfect divider. We present exact and approximate analytical results for the noise figure and noise parameters of the balanced amplifier in divider topology. Measurement results are also presented as a verification.