Browsing by Subject "Magnetrons"
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Item Open Access Fabrication and characterization of SmCo5/Nb ferromagnetic/superconducting hybrid thin films grown by RF magnetron sputtering technique(Elsevier, 2017) Ongun, E.; Kuru, M.; Serhatlıoğlu, M.; Hançer, M.; Ozmetin, A. E.Ferromagnet/Superconductor (F/S) bilayer hybrids show exclusive states due to the mutual interaction between the superconductor and the underlying ferromagnetic substructures in micron scale. In this work, we aimed to observe the effects of the interaction between superconductivity and magnetism, especially the phenomenon involving the orientation and the size of magnetic stripes has been investigated in a coupled ferromagnetic/superconducting thin-film structure. In the proposed F/S hybrid system by this work, superconducting niobium thin-films were combined with underlying segments of ferromagnetic SmCo5 substructures. 300 nm thick magnetic films fabricated by RF magnetron sputtering techniques were topographically grown in patterns with stripes oriented either transverse to or along the direction of current flow. The elemental and microstructural analyses were conducted by EDX, SEM and GIXRD characterization tools. Low-temperature DC transport measurements were conducted by means of four point probe method in a 9T closed-cycle cryogenic refrigeration system. Transport superconducting properties, transition temperature TC(H) and second critical field HC2(T) were measured in a range of applied magnetic field between H = 0–9 kOe for the hybrid system. The results revealed that the artificial periodic modulation of applied field through preferentially-oriented magnetic stripes could introduce normal and superconducting channels or barriers for the current flow.Item Open Access Matrix density effect on morphology of germanium nanocrystals embedded in silicon dioxide thin films(Materials Research Society, 2011) Alagoz, A. S.; Genisel, M. F.; Foss, Steinar; Finstad, T. G.; Turan, R.Flash type electronic memories are the preferred format in code storage at complex programs running on fast processors and larger media files in portable electronics due to fast write/read operations, long rewrite life, high density and low cost of fabrication. Scaling limitations of top-down fabrication approaches can be overcome in next generation flash memories by replacing continuous floating gate with array of nanocrystals. Germanium (Ge) is a good candidate for nanocrystal based flash memories due its small band gap. In this work, we present effect of silicon dioxide (SiO 2) host matrix density on Ge nanocrystals morphology. Low density Ge+SiO 2 layers are deposited between high density SiO 2 layers by using off-angle magnetron sputter deposition. After high temperature post-annealing, faceted and elongated Ge nanocrystals formation is observed in low density layers. Effects of Ge concentration and annealing temperature on nanocrystal morphology and mean size were investigated by using transmission electron microscopy. Positive correlation between stress development and nanocrystal size is observed at Raman spectroscopy measurements. We concluded that non-uniform stress distribution on nanocrystals during growth is responsible from faceted and elongated nanocrystal morphology.