Browsing by Subject "Magnetron sputtering"
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Item Open Access Effect of the superconductivity transition on the response of YBCO edge transition bolometers(2003) Bozbey, Ali; Fardmanesh, Mehdi; Askerzade, I. N.; Banzet, M.; Schubert, J.Dependence of the phase and magnitude of the response of Y-Ba-Cu-O edge transition bolometers on the superconducting transition is studied. The responses of both large and small area devices were investigated and several anomalies are observed. The response of small area LaAlO3 devices considerably differed from that expected based on the dR/dT curve. This discrepancy is observed to be strongly dependent on the superconducting transition. Both the phase and magnitude/(dR/dT) of the response of the devices showed abrupt changes for below the Tc-onset when measured versus temperature, while the phase variation also showed strong dependence on the modulation frequency. We present the analysis and propose mechanisms responsible for the modulation frequency dependence of the response characteristics versus temperature, within the superconductivity transition region of the devices.Item Open Access Fabrication and characterization of SmCo5/Nb ferromagnetic/superconducting hybrid thin films grown by RF magnetron sputtering technique(Elsevier, 2017) Ongun, E.; Kuru, M.; Serhatlıoğlu, M.; Hançer, M.; Ozmetin, A. E.Ferromagnet/Superconductor (F/S) bilayer hybrids show exclusive states due to the mutual interaction between the superconductor and the underlying ferromagnetic substructures in micron scale. In this work, we aimed to observe the effects of the interaction between superconductivity and magnetism, especially the phenomenon involving the orientation and the size of magnetic stripes has been investigated in a coupled ferromagnetic/superconducting thin-film structure. In the proposed F/S hybrid system by this work, superconducting niobium thin-films were combined with underlying segments of ferromagnetic SmCo5 substructures. 300 nm thick magnetic films fabricated by RF magnetron sputtering techniques were topographically grown in patterns with stripes oriented either transverse to or along the direction of current flow. The elemental and microstructural analyses were conducted by EDX, SEM and GIXRD characterization tools. Low-temperature DC transport measurements were conducted by means of four point probe method in a 9T closed-cycle cryogenic refrigeration system. Transport superconducting properties, transition temperature TC(H) and second critical field HC2(T) were measured in a range of applied magnetic field between H = 0–9 kOe for the hybrid system. The results revealed that the artificial periodic modulation of applied field through preferentially-oriented magnetic stripes could introduce normal and superconducting channels or barriers for the current flow.Item Open Access High transparent, low surface resistance ZTO/Ag/ZTO multilayer thin film electrodes on glass and polymer substrates(Elsevier, 2021-02-02) Ekmekcioglu, M.; Erdogan, N.; Astarlıoğlu, Aziz Taner; Yigen, S.; Aygun, G.; Ozyuzer, L.; Ozdemir, M.Zinc tin oxide (ZTO)/Ag/ZTO multilayer thin films were grown by direct current (DC) magnetron sputtering technique at room temperature on soda lime glass (SLG) and different polymer substrates such as polycarbonate (PC) and polyethylene terephthalate (PET) for transparent conductive electrode (TCE) applications. The effect of substrate on the structural, optical and electrical characteristics of ZTO/Ag/ZTO multilayers was investigated. All prepared ZTO/Ag/ZTO films presented amorphous structure as expected from room temperature deposition process and smooth surface quality with very low surface roughness. We found that ZTO/Ag/ZTO multilayer films grown on SLG, PET and PC substrates have very high optical transmission and low surface resistance. Moreover, after ZTO/Ag/ZTO multilayer thin film deposition on polymer substrates, the optical transmission was found to be enhanced because the higher absorption due to Ag layer is compensated by lower reflectance. Our results suggest that ZTO/Ag/ZTO multilayer thin films on any substrate can be a promising alternative to indium tin oxide (ITO) films as a cost-effective, indium-free, flexible and transparent electrode for various applications.Item Open Access High-speed transparent indium-tin-oxide based resonant cavity Schottky photodiode with Si/sub 3/N/sub 4//SiO/sub 2/ top Bragg mirror(IEEE, Piscataway, NJ, United States, 2000) Bıyıklı, Necmi; Kimukin, I.; Aytur, O.; Özbay, Ekmel; Gokkavas, M.; Unlu, S.Photodetectors demonstrating high bandwidth-efficiency (BWE) products are required for high-performance optical communication and measurement systems. For conventional photodiodes the BWE product is limited due to the bandwidth-efficiency trade-off. A resonant cavity enhanced (RCE) photodetection scheme offers the possibility to overcome this limitation. Very high BWE products are achieved using Schottky and p-i-n type RCE photodiodes, which could not be reached with conventional detector structures. Even better performances should be possible for RCE Schottky photodiodes if one can get rid of the optical losses and scattering caused by the Schottky metal, Au, which also serves as the top mirror of the resonant cavity. The transparent, low resistivity material indium-tin-oxide (ITO) is a potential alternative to thin semi-transparent Au as a Schottky-barrier contact material. We report our work on high-performance ITO-based RCE Schottky photodiodes.Item Open Access Investigation of the effect of thermal cycling on the device performance of YBa2Cu3O7-δ DC-SQUIDs(2007) Avci I.; Algul, B.P.; Bozbey, A.; Akram, R.; Tepe, M.; Abukay, D.We investigated the effect of thermal cycling on the operational performance of YBa2Cu3O7-δ (YBCO) direct current superconducting quantum interference devices (DC-SQUIDs) fabricated onto 24°SrTiO3 (STO) bicrystal substrates. The devices under investigation consist of directly coupled DC-SQUID magnetometer configurations. Thin films having 200nm thicknesses were deposited by dc-magnetron sputtering and device patterns were made by a standard lithography process and chemical etching. The SQUIDs having 4νm-wide grain boundary Josephson junctions (GBJJs) were characterized by means of critical currents, peak-to-peak output voltages and noise levels, depending on the thermal cycles. In order to achieve a protective layer for the junctions against the undesired effects of thermal cycles and ambient atmosphere during the room temperature storage, the devices were coated with a 400nm thick YBCO layer at room temperature. Since the second layer of amorphous YBCO is completely electrically insulating, it does not affect the operation of the junctions and pick-up coils of magnetometers. This two-layered configuration ensures the protection of the junctions from ambient atmosphere as well as from the effect of water molecules interacting with the film structure during each thermal cycle. © IOP Publishing Ltd.Item Open Access Postdeposition annealing on RF-sputtered SrTiO3 thin films(AVS Science and Technology Society, 2017) Bayrak, T.; Kizir,S.; Kahveci, E.; Bıyıklı, N.; Goldenberg, E.Understanding of structural, optical, and electrical properties of thin films are very important for a reliable device performance. In the present work, the effect of postdeposition annealing on stoichiometric SrTiO3 (STO) thin films grown by radio frequency magnetron sputtering at room temperature on p-type Si (100) and quartz substrates were studied. Highly transparent and well adhered thin films were obtained in visible and near infrared regions. As-deposited films were amorphous, while nanocrystalline and polycrystalline phases of the STO thin films formed as a function of annealing temperature. Films annealed at 300 �C showed nanocrystallinity with some amorphous phase. Crystallization started after 15 min annealing at 700 �C, and further improved for films annealed at 800 �C. However, crystallinity reduced for films which were annealed at 900 �C. The optical and electrical properties of STO thin films affected by postdeposition annealing at 800 �C: Eg values decreased from 4.50 to 4.18 eV, n(λ) values (at 550 nm) increased from 1.81 to 2.16. The surface roughness increased with the annealing temperature due to the increased crystallite size, densification and following void formation which can be seen from the scanning electron microscopy images. The highest dielectric constants (46 at 100 kHz) observed for films annealed at 800 �C; however, it was lower for 300 �C annealed (25 at 100 kHz) and as-deposited (7 at 100 kHz) STO films having ∼80 nm thickness.Item Open Access The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects(Royal Society of Chemistry, 2015) Cosentino, S.; Mio, A. M.; Barbagiovanni, E. G.; Raciti, R.; Bahariqushchi, R.; Miritello, M.; Nicotra, G.; Aydınlı, Atilla; Spinella, C.; Terrasi, A.; Mirabella, S.Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of the interface on QC in Ge quantum dots (QDs) synthesized by rf-magnetron sputtering or plasma enhanced chemical vapor deposition (PECVD). Through a detailed electron energy loss spectroscopy (EELS) analysis we investigated the structural and chemical properties of QD interfaces. PECVD QDs exhibit a sharper interface compared to sputter ones, which also evidences a larger contribution of mixed Ge-oxide states. Such a difference strongly modifies the QC strength, as experimentally verified by light absorption spectroscopy. A large size-tuning of the optical bandgap and an increase in the oscillator strength occur when the interface is sharp. A spatially dependent effective mass (SPDEM) model is employed to account for the interface difference between Ge QDs, pointing out a larger reduction in the exciton effective mass in the sharper interface case. These results add new insights into the role of interfaces on confined systems, and open the route for reliable exploitation of QC effects. © The Royal Society of Chemistry.Item Open Access Selection of the best proper DC-SQUIDs in a multi-SQUID configuration(IEEE, 2007) Avcı, İ.; Akram, R.; Bozbey, Ali; Tepe, M.; Abukay, D.We have carried out experimental investigation of multi-DC-SQUID magnetometer configuration fabricated on YBa2Cu30 7-δ thin films onto 24 degree SrTiO3 bicrystal substrates by directly coupling the pick-up loop to DC-SQUIDs. The layout of the magnetometer pick-up loop was chosen as a square washer configuration by maximizing loop effective area and minimizing loop inductance. We have used De-Magnetron Sputtering technique for deposition of the films and chemical etching process for patterning the Josephson junctions having 4 μm widths. The use of multi-SQUID configuration is related to the selection of the best proper junctions for SQUID to improve the chip sensitivity with selectivity option of choosing the squid junctions rather than multichannel operation. Selection of the best junctions compared to each other depending on the junction critical currents and noise levels caused by the fabrication process and placements of the junctions on the grain boundary enable having an increased output signal of the DC-SQUID.Item Open Access Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing(Elsevier BV * North-Holland, 2017) Bayrak, T.; Ozgit-Akgun, C.; Goldenberg, E.Among perovskite oxide materials, BaSrTiOx (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the precise knowledge of the film microstructure, as well as optical and electrical properties. In the present work, BST films were deposited at room temperature using radio frequency magnetron sputtering technique. The impact of deposition pressure, partial oxygen flow, and post-deposition annealing treatment on film microstructure, surface morphology, refractive index, and dielectric constants were studied by X-ray diffraction, scanning electron microscopy, spectrophotometry, ellipsometry, photoluminescence, as well as capacitance-voltage measurements. Well-adhered and uniform amorphous films were obtained at room temperature. For all as-deposited films, the average optical transmission was ~ 85% in the VIS-NIR spectrum. The refractive indices of BST films were in the range of 1.90–2.07 (λ = 550 nm). Post-deposition annealing at 800 °C for 1 h resulted in polycrystalline thin films with increased refractive indices and dielectric constants, however reduced optical transmission values. Frequency dependent dielectric constants were found to be in the range of 46–72. However, the observed leakage current was relatively small, about 1 μA. The highest FOM values were obtained for films deposited at 0.67 Pa pressures, while charge storage capacity values increased with increased deposition pressure. Results show that room-temperature grown BST films have potential for device applications.