Browsing by Subject "Low dark current"

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    Low dark current diffusion limited planar type InGaAs photodetectors
    (SPIE, 2019) Dolaş, M. Halit; Ateşal, Okan; Çalışkan, M. Deniz; Bek, A.; Özbay, Ekmel; LeVan, P. D.; Wijewarnasuriya, P.; Sood, A. K.
    In this work, we design and produce 1280x1024 format InGaAs based planar type detectors with 15μm pixel pitch. We have obtained diffusion current limited low dark current (~10fA) and high responsivity (1.08A/W at 1.55μm) values at room temperature conditions. Moreover, dark current modeling is performed using diffusion, generation and recombination (GR) and trap assisted tunneling (TAT) current mechanisms. Ideality factor is extracted from forward bias characteristics. Excellent match between modeling and experimental data is reached. Also, temperature dependency of dark current is studied in 10°C – 60°C ranges. The area and perimeter related dark current components are differentiated using test detectors with changing diameters that are placed next to the detector array structure. Experimental data shows good agreement with theoretical expectations.
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    Solar-blind AlxGa1-xN-based avalanche photodiodes
    (American Institute of Physics, 2005) Tut, T.; Butun, S.; Butun, B.; Gokkavas, M.; Yu, H. B.; Özbay, Ekmel
    We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 mu m diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10(-16) W/Hz(1/2).