Browsing by Subject "Light emitting diodes (LED)"
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Item Open Access Modulating ohmic contact through InGaxNyOz interfacial layer for high-performance InGaN/GaN-based light-emitting diodes(Institute of Electrical and Electronics Engineers Inc., 2016) Zhu B.; Tan S.T.; Liu W.; Lu S.; Zhang, Y.; Chen, S.; Hasanov N.; Kang, X.; Demir, Hilmi VolkanWe report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through the design and the formation of the InGaxNyOz interfacial layer, which maintains high reflectivity of silver and forms good ohmic contact between pristine silver and p-GaN. The interfacial layer was designed and formed by depositing a thin layer of indium tin oxide (ITO) on top of p-GaN, followed by thermal annealing, to enable the interdiffusion and the intermixing of In, Sn, Ga, O, and N atoms. Both electrical and optical performances of the LED with the optimized InGaxNyOz interfacial layer are improved, thus achieving the highest wall-plug efficiency, compared with those LEDs with and without ITO layers at operation current.Item Open Access White light generation with CdSe/ZnS core-shell nanocrystals and InGaN/GaN light emitting diodes(IEEE, 2006) Nizamoğlu, Sedat; Özel, Sedat; Sarı, Emre; Demir, Hilmi VolkanWe present hybrid white light sources that integrate CdSe/ZnS core-shell nanocrystals on blue InGaN/GaN light emitting diodes (LED). We report on the demonstrations of white light generation using yellow nanocrystals (λPL=580 nm) hybridized on a blue LED (λEL= 440 nm) with tristimulus coordinates of x=0.37 and y=0.25, correlated color temperature of Tc=2692 K, and color rendering index of R a=14.6; cyan and red nanocrystals (λPL=500 nm and 620 nm) on a blue LED (λEL=440 nm) with x=0.37, y=0.28, T c=3246 K, and Ra=19.6; and green, yellow, and red nanocrystals (λPL=540 nm, 580 nm, and 620 nm) on a blue LED (λEL=452 nm) with x=0.30, y=0.28, Tc =7521 K, and Ra=40.9. © 2006 IEEE.