Browsing by Subject "Layers"

Now showing 1 - 4 of 4

Open Access
Colorimetric and near-absolute polarization-insensitive refractive-index sensing in all-dielectric guided-mode resonance based metasurface
(American Chemical Society, 2019) Yıldırım, Deniz Umut; Ghobadi, Amir; Soydan, Mahmut Can; Gökbayrak, Murat; Toprak, Ahmet; Bütün, Bayram; Özbay, Ekmel
Colorimetric detection of target molecules with insensitivity to incident-light polarization has attracted considerable attention in recent years. This resulted from the ability to provide rapid output and reduced assay times as a result of color changes upon altering the environment that are easily distinguishable by the naked eye. In this paper, we propose a highly sensitive refractive-index sensor, utilizing the excitation of guided modes of a novel two-dimensional periodically modulated dielectric grating-waveguide structure. The optimized nanosensor can numerically excite guided-mode resonances with an ultranarrow linewidth (full width at half-maximum) of 0.58 nm. Sensitivity is numerically investigated by considering the deposition of dielectric layers on the structure. For a layer thickness of 30 nm, the maximum sensitivity reached as high as 110 nm/refractive index unit (RIU), resulting in a very high figure of merit of 190. The fabricated devices with 30 nm aluminum oxide and zinc oxide coatings achieved a maximum sensitivity of 235.2 nm/RIU with a linewidth of 19 nm. Colorimetric detection with polarization insensitivity is confirmed practically by a simple optical microscope. Samples with different coatings have been observed to have clearly distinct colors, while the color of each sample is nearly identical upon azimuthal rotation. Excellent agreement is obtained between the numerical and experimental results regarding the spectral position of the resonances and sensitivity. The proposed device is, therefore, highly promising in efficient, highly sensitive, almost lossless, and compact molecular diagnostics in the field of biomedicine with personalized, label-free, early point-of-care diagnosis and field analysis, drug detection, and environmental monitoring.
Open Access
Growth mechanism of 2D Mo2C on Cu via CVD
(American Chemical Society, 2023-7-7) Büke, G. C.; Caylan, Ömer Refet; Oğurtanı, Ö. T.
This study investigates the growth of Mo2C crystals via chemical vapor deposition (CVD) in the presence of a carbon (H2/CH4 gas)-containing environment. The study employs both theoretical and experimental approaches to investigate the vertical and lateral (in-plane) growth of Mo2C crystals. A physico-mathematical consideration is applied to develop an analytical forward model, which incorporates bulk diffusivities, surface diffusivities, and solubility gradients for Mo2C crystal growth. Coupled nonlinear flow equations have been advanced for the Mo-, Cu-, Mo2C layer framework and effectively predicted the Mo2C crystal growth rate for both vertical and lateral directions. Forming the Mo2C crystal height and diameter was directly correlated with copper layer thickness and time using the forward model and then validated by the experiments together with SEM and AFM studies. Studies showed that the Cu layer thickness plays a crucial role in controlling the height of the Mo2C crystal while it is not that critical in changing the lateral dimension of the crystal. Beyond simply enhancing Mo2C crystal growth and property-processing relationship, this study demonstrated the synthesis of designer Mo2C, which can be tailored to the needs of specific applications. This forward model will enable us to further enhance and exploit the family of analogs of materials previously demonstrated by other methods.
Open Access
Metalorganic chemical vapor deposition growth and thermal stability of the AllNN/GaN high electron mobility transistor structure
(IOP Publishing, 2011) Yu, H.; Ozturk, M.; Demirel, P.; Cakmak, H.; Bolukbas, B.; Caliskan, D.; Özbay, Ekmel
The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor structure comprising a 7 nm thick nearly lattice-matched Al0.83In0.17 N barrier exhibits a sheet electron density of 2.0 x 10(13) cm(-2) with a high electron mobility of 1540 cm(2) V-1 s(-1). AnAl(0.83)In(0.17)N barrier HEMT device with 1 mu m gate length provides a current density of 1.0 A mm(-1) at V-GS = 0 V and an extrinsic transconductance of 242 mS mm(-1), which are remarkably improved compared to that of a conventional Al0.3Ga0.7N barrier HEMT. To investigate the thermal stability of the HEMT epi-structures, post-growth annealing experiments up to 800 degrees C have been applied to Al0.83In0.17N and Al0.3Ga0.7N barrier heterostructures. As expected, the electrical properties of an Al0.83In0.17N barrier HEMT structure showed less stability than that of an Al0.3Ga0.7N barrier HEMT to the thermal annealing. The structural properties of Al0.83In0.17N/GaN also showed more evidence for decomposition than that of the Al0.3Ga0.7N/GaN structure after 800 degrees C post-annealing.
Open Access
Printed multilayer superstructures of aligned single-walled carbon nanotubes for electronic applications
(American Chemical Society, 2007-10) Kang, S. J.; Kocabaş, Coşkun; Kim, H.-S.; Cao, Q.; Meitl, M. A.; Khang, D.-Y.; Rogers, J. A.
We developed means to form multilayer superstructures of large collections of single-walled carbon nanotubes (SWNTs) configured in horizontally aligned arrays, random networks, and complex geometries of arrays and networks on a wide range of substrates. The approach involves guided growth of SWNTs on crystalline and amorphous substrates followed by sequential, multiple step transfer of the resulting collections of tubes to target substrates, such as high-k thin dielectrics on silicon wafers, transparent plates of glass, cylindrical tubes and other curved surfaces, and thin, flexible sheets of plastic. Electrical measurements on dense, bilayer superstructures, including crossbars, random networks, and aligned arrays on networks of SWNTs reveal some important characteristics of representative systems. These and other layouts of SWNTs might find applications not only in electronics but also in areas such as optoelectronics, sensors, nanomechanical systems, and microfluidics.