Browsing by Subject "Ionization of gases"
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Item Open Access Effect of magnetic field on the radial pulsations of a gas bubble in a non-Newtonian fluid(Elsevier Ltd, 2015) Behnia, S.; Mobadersani F.; Yahyavi, M.; Rezavand, A.; Hoesinpour, N.; Ezzat, A.Dynamics of acoustically driven bubbles' radial oscillations in viscoelastic fluids are known as complex and uncontrollable phenomenon indicative of highly active nonlinear as well as chaotic behavior. In the present paper, the effect of magnetic fields on the non-linear behavior of bubble growth under the excitation of an acoustic pressure pulse in non-Newtonian fluid domain has been investigated. The constitutive equation [Upper-Convective Maxwell (UCM)] was used for modeling the rheological behaviors of the fluid. Due to the importance of the bubble in the medical applications such as drug, protein or gene delivery, blood is assumed to be the reference fluid. It was found that the magnetic field parameter (B) can be used for controlling the nonlinear radial oscillations of a spherical, acoustically forced gas bubble in nonlinear viscoelastic media. The relevance and importance of this control method to biomedical ultrasound applications were highlighted. We have studied the dynamic behavior of the radial response of the bubble before and after applying the magnetic field using Lyapunov exponent spectra, bifurcation diagrams and time series. A period-doubling bifurcation structure was predicted to occur for certain values of the parameters effects. Results indicated its strong impact on reducing the chaotic radial oscillations to regular ones. © 2015 Elsevier Ltd. All rights reserved.Item Open Access Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel(IOP Publishing, 2010-03-16) Gökden, S.; Tülek, R.; Teke, A.; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, Ü.; Morkoç, H.; Lisesivdin, S. B.; Özbay, EkmelThe scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected that InGaN will lead to relatively higher electron mobilities than GaN, Hall mobilities were measured to be much lower for samples with InGaN channels as compared to GaN. To investigate these observations the major scattering processes including acoustic and optical phonons, ionized impurity, interface roughness, dislocation and alloy disorder were applied to the temperature-dependent mobility data. It was found that scattering due mainly to interface roughness limits the electron mobility at low and intermediate temperatures for samples having InGaN channels. The room temperature electron mobilities which were determined by a combination of both optical phonon and interface roughness scattering were measured between 630 and 910 cm2 (V s)-1 with corresponding sheet carrier densities of 2.3-1.3 × 1013 cm-2. On the other hand, electron mobilities were mainly limited by intrinsic scattering processes such as acoustic and optical phonons over the whole temperature range for Al0.82In 0.18N/AlN/GaN and Al0.3Ga0.7N/AlN/GaN heterostructures where the room temperature electron mobilities were found to be 1630 and 1573 cm2 (V s)-1 with corresponding sheet carrier densities of 1.3 and 1.1 × 1013 cm-2, respectively. By these analyses, it could be concluded that the interfaces of HEMT structures with the InGaN channel layer are not as good as that of a conventional GaN channel where either AlGaN or AlInN barriers are used. It could also be pointed out that as the In content in the AlInN barrier layer increases the interface becomes smoother resulted in higher electron mobility.Item Open Access Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method(American Institute of Physics, 2010-07-15) Lisesivdin, S. B.; Yildiz, A.; Balkan, N.; Kasap, M.; Ozcelik, S.; Özbay, EkmelWe carried out the temperature (22-350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al 0.22Ga0.78N/GaN heterostructures with AlN interlayer grown by metal-organic chemical-vapor deposition. Hall data is analyzed with a simple parallel conduction extraction method and temperature dependent mobility and carrier densities of the bulk and two-dimensional (2D) electrons are extracted successfully. The results for the bulk carriers are discussed using a theoretical model that includes the most important scattering mechanisms that contribute to the mobility. In order to investigate the mobility of two-dimensional electron gas, we used a theoretical model that takes into account the polar optical phonon scattering, acoustic phonon scattering, background impurity scattering, and interface roughness scattering in 2D. In these calculations, the values are used for the deformation potential and ionized impurity density values were obtained from the bulk scattering analysis. Therefore, the number of fitting parameters was reduced from four to two. © 2010 American Institute of Physics.