Browsing by Subject "Internal photoemission"
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Item Open Access High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector(IEEE, 2000) Kimukin, İbrahim; Özbay, Ekmel; Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, Orhan; Tuttle, G.Resonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field within a Fabry-Perot resonator. The increased field allows the use of a thin absorbing layer, which minimizes the transit time of the photogenerated carriers without hampering the quantum efficiency. Recently, we fabricated high-speed RCE p-i-n and Schottky photodetectors, where a 90% quantum efficiency along with a 3-dB bandwidth of 50 GHz has been reported. We used the transfer matrix method to design the epilayer structure and to simulate the optical properties of the photodiode. The samples were fabricated by a microwave-compatible process and high-speed measurements were made with an optical parametric oscillator.Item Open Access Plasmonically enhanced hot electorn based optoelectronic devices(Bilkent University, 2015-06) Atar, Fatih BilgeHot electron based optoelectronic devices have been regarded as cost-e ective candidates to their conventional counterparts. The efficiency of conventional optoelectronic devices that rely on semiconductor photo-absorbers are mainly limited by the energy bandgap of the semiconductor. On the other hand, hot electron devices can overcome this limitation via the \internal photoemission" mechanism. Absorbed photons give their energy to free electrons of the metal and these high energy (\hot") electrons can be used to generate photocurrent in proper device configurations. High optical re ection from metals has remained as the main drawback of this photocurrent generation scheme but this problem has recently been addressed by the use of surface plasmons. Optical energy can be tightly confined to a metal layer or metal nanostructures in the form of surface plasmons, and the decay of surface plasmons in metals generates hot electrons. In this work, we study mechanisms of surface plasmon excitation, surface plasmon decay, hot electron generation and hot electron photoemission for photocurrent generation. We demonstrate novel device architectures and plasmon excitation structures. We demonstrate the use of such layers for plasmon enhanced hot electron based photodetectors and photovoltaic devices. A metal-semiconductor Schottky junction diode structure is used as hot electron photodetector. A double metal-insulator-metal (MIM) architecture is proposed as a hot electron photovoltaic device. Full wave electromagnetic simulations of these device structures are conducted to provide insight into the surface plasmon assisted hot electron generation process and give future directions in this field.Item Open Access Ultra-low-cost near-infrared photodetectors on silicon(SPIE, 2015-02) Nazirzadeh, M. Amin; Atar, Fatih B.; Turgut, B. Berkan; Okyay, Ali KemalWe demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that form Schottky contact with Silicon. NIR photons excite plasmon resonances at metal nanoislands and plasmons decay into highly energetic charge carriers (hot electrons). These hot electrons get injected into Silicon (internal photoemission), resulting in photocurrent. Several groups have studied plasmonic nanoantennas using high resolution lithography techniques. In this work, we make use of randomly formed nanoislands for broad-band photoresponse at NIR wavelengths. We observe photoresponse up to 2000 nm wavelength with low dark current density about 50 pA/μm2. The devices exhibit photoresponsivity values as high as 2 mA/W and 600 μA/W at 1.3 μm and 1.55 μm wavelengths, respectively. Thin metal layer was deposited on low-doped n-type Silicon wafer. Rapid thermal annealing results in surface reconstruction of the metal layer into nanoislands. Annealing conditions control the average size of the nanoislands and photoresponse of the devices. An Al-doped Zinc Oxide (AZO) layer was deposited on the nanoislands using thermal atomic layer deposition (ALD) technique to acts as a transparent conductive oxide (TCO) and patterned using photolithography. AZO film creates electrical connection between the nanoislands and also makes a heterojunction to Silicon. Simple and scalable fabrication on Si substrates without the need for any sub-micron lithography or high temperature epitaxy process make these devices good candidates for ultra-low-cost broad-band NIR imaging and spectroscopy applications. © 2015 SPIE.