Browsing by Subject "Integrated photonics"

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Open Access
Asymmetric light propagation in chirped photonic crystal waveguides
(Optical Society of American (OSA), 2012) Kurt H.; Yilmaz, D.; Akosman, A.E.; Özbay, Ekmel
We report numerical and experimental investigations of asymmetric light propagation in a newly designed photonic structure that is formed by creating a chirped photonic crystal (PC) waveguide. The use of a non-symmetric distribution of unit cells of PC ensures the obtaining of asymmetric light propagation. Properly designing the spatial modulation of a PC waveguide inherently modifies the band structure. That in turn induces asymmetry for the light's followed path. The investigation of the transmission characteristics of this structure reveals optical diode like transmission behavior. The amount of power collected at the output of the waveguide centerline is different for the forward and backward propagation directions in the designed configuration. The advantageous properties of the proposed approach are the linear optic concept, compact configuration and compatibility with the integrated photonics. These features are expected to hold great potential for implementing practical optical rectifier-type devices. © 2012 Optical Society of America.
Open Access
In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon
(Nature Publishing Group, 2017) Tokel, O.; Turnalı, A.; Makey, G.; Elahi, P.; Çolakoǧlu, T.; Ergeçen E.; Yavuz, Ö.; Hübner R.; Borra, M. Z.; Pavlov, I.; Bek, A.; Turan, R.; Kesim, D. K.; Tozburun, S.; Ilday, S.; Ilday, F. Ö.
Silicon is an excellent material for microelectronics and integrated photonics 1-3, with untapped potential for mid-infrared optics 4 . Despite broad recognition of the importance of the third dimension 5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements 7, electronic devices and better electronic-photonic integration are lacking 8 . Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-μm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface - that is, 'in-chip' - microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.
Open Access
Multilayer graphene broadband terahertz modulators with flexible substrate
(Springer New York LLC, 2018) Kaya, E.; Kakenov, N.; Altan, H.; Kocabas, C.; Esenturk, O.
Fabrication of terahertz modulators as simple devices with high modulation depth across a broad bandwidth is still very challenging. In this study, four different chemical vapor deposition grown multilayer graphene (MLG) modulators based on MLG/ionic liquid/gold sandwich structures have been investigated. Flexible substrates (PVC and PE) were chosen as host materials, and devices were fabricated with three different thicknesses. The resultant MLG devices can be operated at low voltages between 0 and 3.4 V providing nearly complete modulation between 0.2 and 1.5 THz with low insertion losses. Even with such low gate voltages, the devices have been doped significantly inducing 7-11-fold improvement in their sheet conductivities depending on device thickness. In addition, sheet conductivity has been improved more than three times as the graphene layer number increased from 30 to 100. With the demonstration of promising device performances, the proposed modulators can be potential candidates for applications in terahertz and related optoelectronic technologies.