Browsing by Subject "Infrared photodetectors"

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    Fabrication of 15- $\mu$ m pitch $640{\rm ×}512$ InAs/GaSb type-II superlattice focal plane arrays
    (Institute of Electrical and Electronics Engineers Inc., 2019) Oğuz, Fikri; Arslan, Y.; Ülker, E.; Bek, A.; Özbay, Ekmel
    We present the fabrication of large format 640 × 512, 15-μm pitch, mid-wave infrared region (MWIR) InAs/GaSb type-II superlattice (T2SL) focal plane array (FPA). In this report, the details of device design and fabrication processes are withheld adhering to the common practice of most of the manufactures and developers because of the strategic importance; however, information about fabrication processes of T2SLs FPA is presented to a certain extent. Comparison of etching techniques, passivation materials and methods, and substrate thinning (mechanical and chemical) is given besides of details regarding the standard ohmic contact and indium (In) bump formations. Morphological investigations of fabrication step are included. Large area pixels, 220 μm × 220 μm, fabricated by different etching methods and passivation materials/methods are compared in terms of dark current levels. Wet passivation with (NH 4 ) 2 S is discussed in terms of morphological investigations, and dark current results are compared with untreated samples. Large area pixel level characterizations as well as image level benchmarking of mechanical and chemical substrate thinning are reported. Effect of GaSb substrate on device performance and the way of reducing stress of In bumps are revealed. The importance of complete substrate removal is demonstrated through FPA images.
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    ItemOpen Access
    High performance 15-μm pitch 640 × 512 MWIR InAs/GaSb type-II superlattice sensors
    (IEEE, 2021-11-18) Oğuz, Fikri; Ülker, E.; Arslan, Y.; Nuzumlali, Ö. L.; Bek, Alpan; Özbay, Ekmel
    We report the high performance of Mid-wave Infrared Region (MWIR) InAs/GaSb Type-II Superlattice (T2SL) sensors with $640\times512$ format and 15- $\mu \text{m}$ pixel pitch at both Focal Plane Array (FPA) and pixel level. The p-intrinsic-Barrier-n epilayer structure is adopted for this study, which is grown on 620 ± $30~ \mu \text{m}$ thick GaSb substrate and highly-doped GaSb cap layer at the top structure. The mesa type pixels with sizes of $220\,\,\mu \text{m}\,\,\times 220\,\,\mu \text{m}$ have dark currents $7.8\times10$ −12 A at 77 K both of which are equivalent to state-of-the-art values for Type-II Superlattice sensors. The various passivation techniques to lower the dark current are applied and the results are given in terms of dark current. Electro-optical measurements yielded comparable results to literature. After gathering data and optimizing the fabrication conditions, the FPA of 15- $\mu \text{m}$ pitch having $4.92~ \mu \text{m}$ cut-off wavelength ( $\lambda _{\mathrm {c}}$ ) shows 1.6 A/W peak responsivity, Noise Equivalent Temperature Difference (NETD) of 22.6 mK with optics of f/2.3, quantum efficiency larger than 65% and 99.75% operability. The acquired images by using aforementioned FPA device is presented in this paper. With the reduction of dark current, an encouraging imaging performance is obtained which shows the potential of the Type-II Superlattice detectors in 3 rd generation infrared sensors.