Browsing by Subject "InAlN, normally-off"

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    Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates
    (SPIE, 2019-02) Gülseren, Melisa Ekin; Bozok, Berkay; Kurt, Gökhan; Kayal, Ömer Ahmet; Öztürk, Mustafa; Ural, Sertaç; Bütün, Bayram; Özbay, Ekmel
    A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude.