Browsing by Subject "Hole transports"

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    A charge inverter for III-nitride light-emitting diodes
    (American Institute of Physics Inc., 2016) Zhang Z.-H.; Zhang, Y.; Bi, W.; Geng, C.; Xu S.; Demir, Hilmi Volkan; Sun, X. W.
    In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO2 insulator layer on the p+-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p+-GaN and SiO2 insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO2 layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p+-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm2 LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.
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    Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
    (Optical Society of America, 2013) Ji Y.; Zhang, Z. -H.; Tan S.T.; Ju, Z. G.; Kyaw, Z.; Hasanov N.; Liu W.; Sun X. W.; Demir, Hilmi Volkan
    We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure. © 2013 Optical Society of America.
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    Graded-host phosphorescent light-emitting diodes with high efficiency and reduced roll-off
    (A I P Publishing LLC, 2012) Liu, S. W.; Sun, X. W.; Demir, Hilmi Volkan
    We demonstrated graded-host phosphorescent organic light-emitting diodes with high efficiency and reduced efficiency roll-off. The emissive layer of the graded host device consists of both electron and hole transport type hosts, 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBI) and 4,4-,4- tris(Ncarbazolyl) triphenylamine, respectively, with graded composition, and the phosphorescent red emitter bis(2-phenylquinoline) (acetylacetonate) iridium(III), which wasuniformly doped into the graded hostmatrix. The graded host device shows improved quantum efficiency and power efficiency with significantly reduced efficiency rolloff as compared to the unipolar-host and double layer heterojunction host devices.