Browsing by Subject "High temperature applications"

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    Polymer-free nanofibers from vanillin/cyclodextrin inclusion complexes: high thermal stability, enhanced solubility and antioxidant property
    (Royal Society of Chemistry, 2016) Celebioglu A.; Kayaci-Senirmak, F.; Ipek, S.; Durgun, Engin; Uyar, Tamer
    Vanillin/cyclodextrin inclusion complex nanofibers (vanillin/CD-IC NFs) were successfully obtained from three modified CD types (HPβCD, HPγCD and MβCD) in three different solvent systems (water, DMF and DMAc) via an electrospinning technique without using a carrier polymeric matrix. Vanillin/CD-IC NFs with uniform and bead-free fiber morphology were successfully produced and their free-standing nanofibrous webs were obtained. The polymer-free CD/vanillin-IC-NFs allow us to accomplish a much higher vanillin loading (∼12%, w/w) when compared to electrospun polymeric nanofibers containing CD/vanillin-IC (∼5%, w/w). Vanillin has a volatile nature yet, after electrospinning, a significant amount of vanillin was preserved due to complex formation depending on the CD types. Maximum preservation of vanillin was observed for vanillin/MβCD-IC NFs which is up to ∼85% w/w, besides, a considerable amount of vanillin (∼75% w/w) was also preserved for vanillin/HPβCD-IC NFs and vanillin/HPγCD-IC NFs. Phase solubility studies suggested a 1:1 molar complexation tendency between guest vanillin and host CD molecules. Molecular modelling studies and experimental findings revealed that vanillin:CD complexation was strongest for MβCD when compared to HPβCD and HPγCD in vanillin/CD-IC NFs. For vanillin/CD-IC NFs, water solubility and the antioxidant property of vanillin was improved significantly owing to inclusion complexation. In brief, polymer-free vanillin/CD-IC NFs are capable of incorporating a much higher loading of vanillin and effectively preserve volatile vanillin. Hence, encapsulation of volatile active agents such as flavor, fragrance and essential oils in electrospun polymer-free CD-IC NFs may have potential for food related applications by integrating the particularly large surface area of NFs with the non-toxic nature of CD and inclusion complexation benefits, such as high temperature stability, improved water solubility and an enhanced antioxidant property, etc.
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    Ultra-low-cost near-infrared photodetectors on silicon
    (SPIE, 2015-02) Nazirzadeh, M. Amin; Atar, Fatih B.; Turgut, B. Berkan; Okyay, Ali Kemal
    We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that form Schottky contact with Silicon. NIR photons excite plasmon resonances at metal nanoislands and plasmons decay into highly energetic charge carriers (hot electrons). These hot electrons get injected into Silicon (internal photoemission), resulting in photocurrent. Several groups have studied plasmonic nanoantennas using high resolution lithography techniques. In this work, we make use of randomly formed nanoislands for broad-band photoresponse at NIR wavelengths. We observe photoresponse up to 2000 nm wavelength with low dark current density about 50 pA/μm2. The devices exhibit photoresponsivity values as high as 2 mA/W and 600 μA/W at 1.3 μm and 1.55 μm wavelengths, respectively. Thin metal layer was deposited on low-doped n-type Silicon wafer. Rapid thermal annealing results in surface reconstruction of the metal layer into nanoislands. Annealing conditions control the average size of the nanoislands and photoresponse of the devices. An Al-doped Zinc Oxide (AZO) layer was deposited on the nanoislands using thermal atomic layer deposition (ALD) technique to acts as a transparent conductive oxide (TCO) and patterned using photolithography. AZO film creates electrical connection between the nanoislands and also makes a heterojunction to Silicon. Simple and scalable fabrication on Si substrates without the need for any sub-micron lithography or high temperature epitaxy process make these devices good candidates for ultra-low-cost broad-band NIR imaging and spectroscopy applications. © 2015 SPIE.