Browsing by Subject "GaN MMIC"
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Item Open Access S-band GaN based low noise MMIC amplifier design and characterization(2019-02) Taşcı, MuhittinLow Noise Amplifiers (LNA) are widely preferred components in receiver frontend modules. The received signal level is generally very low and amplifying it without adding too much noise is very crucial in communication systems. In this thesis study design, fabrication and test of three Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Circuit (MMIC) LNAs are presented. Inductive source feedback topology is used to obtain both better input return loss and noise figure. All three designs achieve higher than 20 dB gain, better than 10 dB input return loss and their noise figure values are 2 dB, 1.5 dB and 1 dB in S-band. High resistive gate biasing is utilized at third design to increase input power handling. Size reduction is very important in MMIC technology. The first design is 3 x 5 mm and the second design is 2 x 3.5 mm, % 46 size reduction is achieved. In GaN technology controlling SiN layer thickness is very problematic and this fabrication step affects capacitor values. The second and third LNA designs presented in this research, matching circuitries and implicitly overall characteristics are not in uenced too much by a change of capacitor values. Targeted bandwidth is 2.7-3.5 GHz, achieved frequency range is 1.5 GHz (from 2.5 GHz to 4 GHz). The three LNA designs have 28.1 dBm, 33.4 dBm, and 35.9 dBm output third-order intercept point respectively. Output powers at 1-dB compression points are 18.2 dBm, 23.4 dBm and 25.9 dBm. For all three LNA designs, group delay is less than 0.3 nanoseconds.Item Open Access An S-Band high gain AlGaN/GaN HEMT MMIC low noise amplifier(IEEE, 2019) Muhittin, Tasçı; Şen, Ö.; Özbay, EkmelIn this paper design, fabrication and measurement of a GaN HEMT based Monolithic Microwave Integrated Circuit (MMIC) Low Noise Amplifier (LNA) is presented. 12-Term equivalent circuit modeling is exacuted. Inductive source feedback topology is used to obtain low Noise Figure (NF) with appropriate input return loss. The gain of this design is higher than 25 dB, input return loss is better than 13 dB and NF value is 1.6 dB in S band. This work is only 3 x 5 mm. LNA has 28.1 dBm output third-order intercept point. Output power at 1-dB compression point is 18.2 dBm. Group delay is less than 0.3 nanoseconds. Due to superior properties of GaN technology, without NF performance degradation GaN LNA enables to high input power handling (P in is 20 dBm, CW, 10 mins).