Browsing by Subject "Forward bias"
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Item Open Access Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures(ELSEVIER, 2010) Arslan, E.; Bütün, S.; Şafak, Y.; Uslu, H.; Tascioglu I.; Altindal, S.; Özbay, EkmelThe forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height ( B0), series resistance (R s), interface-state density (N ss). The energy density distribution profiles of the N ss were obtained from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height ( e) and ideality factor (n V) of devices. In addition, the N ss as a function of E c-E ss was determined from the low-high frequency capacitance methods. It was found that the values of N ss and R s in SBD HEMTs decreases with increasing insulator layer thickness.Item Open Access Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range(Elsevier, 2012-07-27) Arslan, E.; Çakmak, H.; Özbay, EkmelThe current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and Schottky barrier heights (SBHs), as determined by thermionic emission (TE), were a strong function of temperature and Φb0 show the unusual behavior of increasing linearly with an increase in temperature from 80 to 360 K for both Schottky contacts. The tunneling saturation ( JTU(0)) and tunneling parameters (E 0) were calculated for both Schottky contacts. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. The results indicate that the dominant mechanism of the charge transport across the Pt/p-InGaN and Pt/n-InGaN Schottky contacts are electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-360 K.