Browsing by Subject "Forster Resonance Energy Transfer"

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Open Access
Excitonics of semiconductor quantum dots and wires for lighting and displays
(Wiley-VCH Verlag, 2013) Guzelturk, B.; Martinez, P. L. H.; Zhang, Q.; Xiong, Q.; Sun, H.; Sun, X. W.; Govorov, A. O.; Demir, Hilmi Volkan
In the past two decades, semiconductor quantum dots and wires have developed into new, promising classes of materials for next-generation lighting and display systems due to their superior optical properties. In particular, exciton-exciton interactions through nonradiative energy transfer in hybrid systems of these quantum-confined structures have enabled exciting possibilities in light generation. This review focuses on the excitonics of such quantum dot and wire emitters, particularly transfer of the excitons in the complex media of the quantum dots and wires. Mastering excitonic interactions in low-dimensional systems is essential for the development of better light sources, e.g., high-efficiency, high-quality white-light generation; wide-range color tuning; and high-purity color generation. In addition, introducing plasmon coupling provides the ability to amplify emission in specially designed exciton-plasmon nanostructures and also to exceed the Forster limit in excitonic interactions. In this respect, new routes to control excitonic pathways are reviewed in this paper. The review further discusses research opportunities and challenges in the quantum dot and wire excitonics with a future outlook.
Open Access
Phonon-assisted exciton transfer into silicon using nanoemitters: the role of phonons and temperature effects in förster resonance energy transfer
(American Chemical Society, 2013) Yeltik A.; Guzelturk, B.; Hernandez-Martinez, P. L.; Govorov, A. O.; Demir, Hilmi Volkan
We study phonon-assisted Forster resonance energy transfer (FRET) into an indirect band-gap semiconductor using nanoemitters. The unusual temperature dependence of this energy transfer, which is measured using the donor nanoemitters of quantum dot (QD) layers integrated on the acceptor monocrystalline bulk silicon as a model system, is predicted by a phonon-assisted exciton transfer model proposed here. The model includes the phonon-mediated optical properties of silicon, while considering the contribution from the multimonolayer-equivalent QD film to the nonradiative energy transfer, which is derived with a d(-3) distance dependence. The FRET efficiencies are experimentally observed to decrease at cryogenic temperatures, which are well explained by the model considering the phonon depopulation in the indirect band-gap acceptor together with the changes in the quantum yield of the donor. These understandings will be crucial for designing FRET-enabled sensitization of silicon based high-efficiency excitonic systems using nanoemitters.