Browsing by Subject "Film thickness"
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Item Open Access Comparative study of thin film n-i-p a-Si: H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles(Elsevier Ltd, 2015) Islam, K.; Chowdhury F.I.; Okyay, Ali Kemal; Nayfeh, A.In this paper, the effect of gold nanoparticles on n-i-p a-Si:H solar cells with different intrinsic layer (i-layer) thicknesses has been studied. 100nm and 500nm i-layer based n-i-p a-Si:H solar cells were fabricated and colloidal gold (Au) nanoparticles dispersed in water-based solution were spin-coated on the top surface of the solar cells. The Au nanoparticles are of spherical shape and have 100nm diameter. Electrical and quantum efficiency measurements were carried out and the results show an increase in short-circuit current density (Jsc), efficiency and external quantum efficiency (EQE) with the incorporation of the nanoparticles on both cells. Jsc increases from 5.91mA/cm2 to 6.5mA/cm2 (~10% relative increase) and efficiency increases from 3.38% to 3.97% (~17.5% relative increase) for the 100nm i-layer solar cell after plasmonic enhancement whereas Jsc increases from 9.34mA/cm2 to 10.1mA/cm2 (~7.5% relative increase) and efficiency increases from 4.27% to 4.99% (~16.9% relative increase) for the 500nm i-layer cell. The results show that plasmonic enhancement is more effective in 100nm than 500nm i-layer thickness for a-Si:H solar cells. Moreover, the results are discussed in terms of light absorption and electron hole pair generation. © 2015 Elsevier Ltd.Item Open Access Homogenization-based design of surface textures in hydrodynamic lubrication(John Wiley and Sons Ltd, 2016) Waseem, A.; Temizer, İ.; Kato, J.; Terada, K.An optimization framework is developed for surface texture design in hydrodynamic lubrication. The microscopic model of the lubrication interface is based on the Reynolds equation, and the macroscopic response is characterized through homogenization. The microscale setting assumes a unilateral periodic texture but implicitly accounts for the bilateral motion of the surfaces. The surface texture in a unit cell is described indirectly through the film thickness, which is allowed to vary between prescribed minimum and maximum values according to a morphology variable distribution that is obtained through the filtering of a design variable. The design and morphology variables are discretized using either element-wise constant values or through first-order elements. In addition to sharp textures, which are characterized by pillars and holes that induce sudden transitions between extreme film thickness values, the framework can also attain a variety of non-standard smoothly varying surface textures with a macroscopically isotropic or anisotropic response. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.Item Open Access Influence of channel layer thickness on the electrical performances of inkjet-printed In-Ga-Zn oxide thin-film transistors(IEEE, 2010-12-10) Wang, Y.; Sun, X. W.; Goh, G. K. L.; Demir, Hilmi Volkan; Yu, H. Y.Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) with bottom-gate bottom-contact device architecture are studied in this paper. The impact of the IGZO film thickness on the performance of TFTs is investigated. The threshold voltage, field-effect mobility, on and off drain current, and subthreshold swing are strongly affected by the thickness of the IGZO film. With the increase in film thickness, the threshold voltage shifted from positive to negative, which is related to the depletion layer formed by the oxygen absorbed on the surface. The field-effect mobility is affected by the film surface roughness, which is thickness dependent. Our results show that there is an optimum IGZO thickness, which ensures the best TFT electrical performance. The best result is from a 55-nm-thick IGZO TFT, which showed a field-effect mobility in the saturation region of 1.41 cm(2)/V . s, a threshold voltage of 1 V, a drain current on/off ratio of approximately 4.3 x 10(7), a subthreshold swing of 384 mV/dec, and an off-current level lower than 1 pA.Item Open Access Perfectly absorbing ultra thin interference coatings for hydrogen sensing(OSA - The Optical Society, 2016) Serhatlioglu, M.; Ayas S.; Bıyıklı, Necmi; Dana, A.; Solmaz, M. E.Here we numerically demonstrate a straightforward method for optical detection of hydrogen gas by means of absorption reduction and colorimetric indication. A perfectly absorbing metal-insulator-metal (MIM) thin film interference structure is constructed using a silver metal back reflector, silicon dioxide insulator, and palladium as the upper metal layer and hydrogen catalyst. The thickness of silicon dioxide allows the maximizing of the electric field intensity at the Air/SiO2 interface at the quarter wavelengths and enabling perfect absorption with the help of highly absorptive palladium thin film (∼7 nm). While the exposure of the MIM structure to H2 moderately increases reflection, the relative intensity contrast due to formation of metal hydride is extensive. By modifying the insulator film thickness and hence the spectral absorption, the color is tuned and eye-visible results are obtained.