Browsing by Subject "Figures of merits"

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    Plasmonic materials based on ZnO films and their potential for developing broadband middle-infrared absorbers
    (American Institute of Physics Inc., 2014) Kesim, Y.E.; Battal, E.; Okyay, Ali Kemal
    Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic losses. Alternative plasmonic materials that offer low loss and tunability are desired for a new generation of efficient and agile devices. In this paper, atomic layer deposition (ALD) grown ZnO is investigated as a candidate material for plasmonic applications. Optical constants of ZnO are investigated along with figures of merit pertaining to plasmonic waveguides. We show that ZnO can alleviate the trade-off between propagation length and mode confinement width owing to tunable dielectric properties. In order to demonstrate plasmonic resonances, we simulate a grating structure and computationally demonstrate an ultra-wide-band (4-15 μm) infrared absorber. © 2014 Author(s).
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    Study of junction and bias parameters in readout of phase qubits
    (2012) Zandi H.; Safaei, S.; Khorasani, S.; Fardmanesh, M.
    The exact numerical solution of the nonlinear Ginzburg-Landau equation for Josephson junctions is obtained, from which the precise nontrivial current density and effective potential of the Josephson junctions are found. Based on the resulting potential well, the tunneling probabilities of the associated bound states are computed which are in complete agreement with the reported experimental data. The effects of junction and bias parameters such as thickness of the insulating barrier, cross sectional area, bias current, and magnetic field are fully investigated using a successive perturbation approach. We define and compute figures of merit for achieving optimal operation of phase qubits and measurements of the corresponding states. Particularly, it is found that Josephson junctions with thicker barriers yield better performance in measurements of phase qubits. The variations of characteristic parameters such as life time of the states due to the above considered parameters are also studied and discussed to obtain the appropriate configuration setup.