Browsing by Subject "Energy dissipation"

Now showing 1 - 10 of 10

Open Access
Band Structure and Optical Properties of Kesterite Type Compounds: First principle calculations
(Institute of Physics Publishing, 2017) Palaz S.; Unver H.; Ugur G.; Mamedov, Amirullah; Özbay, Ekmel
In present work, our research is mainly focused on the electronic structures, optical and magnetic properties of Cu2FeSnZ4 (Z = S, Se) compounds by using ab initio calculations within the generalized gradient approximation (GGA). The calculations are performed by using the Vienna ab-initio simulation package (VASP) based on the density functional theory. The band structure of the Cu2FeSnZ4 ( Z = S, Se) compounds for majority spin (spin-up) and minority spin (spin-down) were calculated. It is seen that for these compounds, the majority spin states cross the Fermi level and thus have the metallic character, while the minority spin states open the band gaps around the Fermi level and thus have the narrow-band semiconducting nature. For better understanding of the electronic states, the total and partial density of states were calculated, too. The real and imaginary parts of dielectric functions and hence the optical functions such as energy-loss function, the effective number of valance electrons and the effective optical dielectric constant for Cu2FeSnZ4 (Z = S, Se) compounds were also calculated. © Published under licence by IOP Publishing Ltd.
Open Access
Design of application specific processors for the cached FFT algorithm
(IEEE, 2006-05) Atak, Oğuzhan; Atalar, Abdullah; Arıkan, Erdal; Ishebabi, H.; Kammler, D.; Ascheid, G.; Meyr, H.; Nicola, M.; Masera, G.
Orthogonal frequency division multiplexing (OFDM) is a data transmission technique which is used in wired and wireless digital communication systems. In this technique, fast Fourier transformation (FFT) and inverse FFT (IFFT) are kernel processing blocks in an OFDM system, and are used for data (de)modulation. OFDM systems are increasingly required to be flexible to accommodate different standards and operation modes, in addition to being energy-efficient. A trade-off between these two conflicting requirements can be achieved by employing application-specific instruction-set processors (ASIPs). In this paper, two ASIP design concepts for the cached FFT algorithm (CFFT) are presented. A reduction in energy dissipation of up to 25% is achieved compared to an ASIP for the widely used Cooley-Tukey FFT algorithm, which was designed by using the same design methodology and technology. Further, a modified CFFT algorithm which enables a better cache utilization is presented. This modification reduces the energy dissipation by up to 10% compared to the original CFFT implementation.
Open Access
Electron spectroscopy and the electronic structure of KNbO3: First principle calculations
(Taylor & Francis Online, 2014) Simsek S.; Koc, H.; Trepakov, V. A.; Mamedov, A. M.; Özbay, Ekmel
The electronic structures of KNbO3were calculated within the density functional theory, and their evolution was analyzed as the crystal-field symmetry changes from cubic to rhombohedral via tetragonal phase. We carried out electron-energy loss spectroscopy experiments by using synchrotron radiation and compared the results with the theoretical spectra calculated within Density Functional Theory. The dominant role of the NbO6 octahedra in the formation of the energy spectra of KNbO3compound was demonstrated. The anomalous behavior of plasmons in ferroelectrics was exhibited by the function representing the characteristic energy loss in the region of phase transition. © 2014 Copyright Taylor & Francis Group, LLC.
Open Access
Electronic transport through a kink in an electron waveguide
(Institute of Electrical and Electronics Engineers, 1994) Yalabik, M. C.
The current-voltage denendence correspondinp to electronic transport through a kink in an electronic waveguide is analyzed. No phase breaking dissipation mechanisms are considered, but the effects of the Coulomb interaction are included through a self consistent approximation. The results indicate very nonlinear transport properties, including negative differential resistance and bistability. © 1994 IEEE
Open Access
Energy dissipation in atomic force microscopy and atomic loss processes
(American Physical Society, 2001) Hoffmann, P. M.; Jeffery, S.; Pethica, J. B.; Özer, H. Ö.; Oral, A.
Atomic scale dissipation is of great interest in nanomechanics and atomic manipulation. We present dissipation measurements with a linearized, ultrasmall amplitude atomic force microscope which is capable of measuring dissipation at chosen, fixed separations. We show that the dynamic dissipation in the noncontact regime is of the order of a few 10–100 meV per cycle. This dissipation is likely due to the motion of a bistable atomic defect in the tip-surface region. In the contact regime we observe dc hysteresis associated with nanoscale plasticity. We find the hysteretic energy loss to be 1 order of magnitude higher for a silicon surface than for copper.
Open Access
Magnetic and electric Aharonov-Bohm effects in nanostructures
(Elsevier BV, 1996) Kulik, I. O.
The paper reviews and extends the magnetic Aharonov-Bohm effect (persistent current, resistance oscillation) in normal-metal rings including spin-independent and spin-dependent hopping, Zeeman splitting, magnetic textures and wheels, ring rotation and weak coupling, as well as the electric Aharonov-Bohm effect ("persistent charge") in small metallic contacts. We then discuss dynamical screening effects in a surface charge in a metal. Energy dissipation due to motion of the surface charge has a singularity at the velocity of motion equal to the phonon propagation velocity. Surface image of an external charge inside the metal is strongly distorted at the velocity of motion larger than the Fermi velocity.
Open Access
Optical properties of the narrow-band ferroelectrics: first principle calculations
(Taylor & Francis Inc., 2015) Koc, H.; Simsek S.; Mamedov, A. M.; Özbay, Ekmel
Based on density functional theory, we have studied the electronic, and optical properties of narrow-band ferroelectric compounds - (Ge,Sn) Te. Generalized gradient approximation has been used for modeling exchange-correlation effects. The lattice parameters of the considered compounds have been calculated. The calculated electronic band structure shows that GeTe and SnTe compounds have a direct forbidden band gap of 0.742 and 0.359. The real and imaginary parts of dielectric functions and therefore, the optical functions such as energy-loss function, as well as the effective number of valance electrons and the effective optical dielectric constant are all calculated. Our structural estimation and some other results are in agreement with the available experimental and theoretical data. © 2015 Taylor & Francis Group, LLC.
Open Access
The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects
(Royal Society of Chemistry, 2015) Cosentino, S.; Mio, A. M.; Barbagiovanni, E. G.; Raciti, R.; Bahariqushchi, R.; Miritello, M.; Nicotra, G.; Aydınlı, Atilla; Spinella, C.; Terrasi, A.; Mirabella, S.
Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of the interface on QC in Ge quantum dots (QDs) synthesized by rf-magnetron sputtering or plasma enhanced chemical vapor deposition (PECVD). Through a detailed electron energy loss spectroscopy (EELS) analysis we investigated the structural and chemical properties of QD interfaces. PECVD QDs exhibit a sharper interface compared to sputter ones, which also evidences a larger contribution of mixed Ge-oxide states. Such a difference strongly modifies the QC strength, as experimentally verified by light absorption spectroscopy. A large size-tuning of the optical bandgap and an increase in the oscillator strength occur when the interface is sharp. A spatially dependent effective mass (SPDEM) model is employed to account for the interface difference between Ge QDs, pointing out a larger reduction in the exciton effective mass in the sharper interface case. These results add new insights into the role of interfaces on confined systems, and open the route for reliable exploitation of QC effects. © The Royal Society of Chemistry.
Open Access
Theoretical and spectroscopic investigations on the structure and bonding in B-C-N thin films
(2009) Bengu, E.; Genisel, M. F.; Gulseren, O.; Ovali, R.
In this study, we have synthesized boron, carbon, and nitrogen containing films using RF sputter deposition. We investigated the effects of deposition parameters on the chemical environment of boron, carbon, and nitrogen atoms inside the films. Techniques used for this purpose were grazing incidence reflectance-Fourier-transform infrared spectroscopy (GIR-FTIR), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). GIR-FTIR experiments on the B-C-N films deposited indicated presence of multiple features in the 600 to 1700 cm- 1 range for the infrared (IR) spectra. Analysis of the IR spectra, XPS and the corresponding EELS data from the films has been done in a collective manner. The results from this study suggested even under nitrogen rich synthesis conditions carbon atoms in the B-C-N films prefer to be surrounded by other carbon atoms rather than boron and/or nitrogen. Furthermore, we have observed a similar behavior in the chemistry of B-C-N films deposited with increasing substrate bias conditions. In order to better understand these results, we have compared and evaluated the relative stability of various nearest-neighbor and structural configurations of carbon atoms in a single BN sheet using DFT calculations. These calculations also indicated that structures and configurations that increase the relative amount of C-C bonding with respect to B-C and/or C-N were energetically favorable than otherwise. As a conclusion, carbon tends to phase-segregate in to carbon clusters rather than displaying a homogeneous distribution for the films deposited in this study under the deposition conditions studied.
Open Access
A Wired-AND Current-Mode Logic Circuit Technique in CMOS for Low-Voltage, High-Speed and Mixed-Signal VLSIC
(1997) Ungan I.E.; Aşkar, M.
A wired-AND current-mode logic (WCML) circuit technique in CMOS technology for low-voltage and high-speed VLSI circuits is proposed, and a WCML cell library is developed using standard 0.8 micron CMOS process. The proposed WCML technique applies the analog circuit design methodologies to the digital circuit design. The input and output logic signals are represented by current quantities. The supply current of the logic circuit is adjustable for the required logic speed and the switching noise level. The noise is reduced on the power supply lines and in the substrate by the current-steering technique and by the smooth swing of the reduced node potentials. Precise analog circuits and fast digital circuits can be integrated on the same silicon substrate by using the low noise property of the WCML. It is shown by the simulations that at low supply voltages, the WCML is faster and generates less switching noise when compared to the static-CMOS logic. At high speeds, the power dissipation of the WCML is less than that of the static-CMOS logic.