Browsing by Subject "Electronic and optical properties"

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Open Access
Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors
(Elsevier, 2013) Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla
We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier pushes the electron and hole wavefunctions towards the layer edges and under bias, increases the overlap integral by about 25% leading to higher detectivity. InAs/AlSb/GaSb superlattices were studied with density functional theory. Both AlAs and InSb interfaces were taken into account by calculating the heavy hole-light hole (HH-LH) splittings. Experiments were carried out on single pixel photodiodes by measuring electrical and optical performance. With cut-off wavelength of 4.2 μm at 120 K, temperature dependent dark current and detectivity measurements show that the dark current is 2.5 × 10 -9 A under zero bias with corresponding R0A resistance of 1.5 × 104 Ω cm2 for the 500 × 500 μm2 single pixel square photodetectors. Photodetector reaches BLIP condition at 125 K with the BLIP detectivity (DBLIP) of 2.6 × 10 10 Jones under 300 K background and -0.3 V bias voltage. © 2012 Elsevier B.V. All rights reserved.
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Electronic and optical properties of example 2D systems under the vertical electric field
(2024-07) Yüksek, Yılmaz Can
From optics to nanoelectronics, two-dimensional (2D) materials have drawn attention due to their extraordinary properties such as high carrier mobility, good thermal and electrical conductivity, and mechanical strength. Electronic and optical properties of example 2D systems containing single-layer graphene, 2D molybdenum carbide (Mo2C), and 2D tungsten diselenide (WSe2) under the vertical (perpendicular) static electric field (E-field) varying between 0.1 V/˚A and 2.5 V/˚A are investigated by the first principles calculations based on the density functional theory. Contributions of van der Waals interactions are included by selecting a suitable exchange-correlation functional. Electronic band structure and density of states information confirmed that monolayer graphene and single-layer Mo2C exhibit metallic properties whereas 2D WSe2 is a semiconductor with a direct band gap. For all systems up to some magnitude of the E-field, the bands in the valance band were found to be degenerate whereas shifts took place in the conduction band as the E-field was introduced to the system. By increasing E-field amplitudes, the Dirac point shifted upwards in graphene, and σ∗ band shifted below the Fermi level at 0.5 V/˚A. In addition to four well-known interband transitions (π → π∗, σ → σ∗, σ → π∗, π → σ∗), σ∗ → π∗ transition is observed. After an electric field amplitude (Ez) of 0.8 V/˚A, bands due to the s-orbitals of Mo atoms in monolayer Mo2C shifted below the Fermi level. Additionally, π plasmon peaks redshifted up to 0.4 V/˚A and blueshifted for 0.6 V/˚A ≤ Ez ≤ 2.5 V/˚A. For the monolayer WSe2 system, the band gap becomes zero when Ez ≥ 1.0 V/˚A which indicates a semiconductor-to-metal transition under the E-field. Shifts below the Fermi level enabled us to n-dope those systems.
Open Access
Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: a first-principles perspective to recent synthesis
(American Institute of Physics Inc., 2018) Kecik D.; Onen, A.; Konuk, M.; Gürbüz, E.; Ersan, F.; Cahangirov, S.; Aktürk, E.; Durgun, Engin; Çıracı, Salim
Potential applications of bulk GaN and AlN crystals have made possible single and multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005, the theoretical studies have predicted that GaN and AlN can form two-dimensional (2D) stable, single-layer (SL) structures being wide band gap semiconductors and showing electronic and optical properties different from those of their bulk parents. Research on these 2D structures have gained importance with recent experimental studies achieving the growth of ultrathin 2D GaN and AlN on substrates. It is expected that these two materials will open an active field of research like graphene, silicene, and transition metal dichalcogenides. This topical review aims at the evaluation of previous experimental and theoretical works until 2018 in order to provide input for further research attempts in this field. To this end, starting from three-dimensional (3D) GaN and AlN crystals, we review 2D SL and multilayer (ML) structures, which were predicted to be stable in free-standing states. These are planar hexagonal (or honeycomb), tetragonal, and square-octagon structures. First, we discuss earlier results on dynamical and thermal stability of these SL structures, as well as the predicted mechanical properties. Next, their electronic and optical properties with and without the effect of strain are reviewed and compared with those of the 3D parent crystals. The formation of multilayers, hence prediction of new periodic layered structures and also tuning their physical properties with the number of layers are other critical subjects that have been actively studied and discussed here. In particular, an extensive analysis pertaining to the nature of perpendicular interlayer bonds causing planar GaN and AlN to buckle is presented. In view of the fact that SL GaN and AlN can be fabricated only on a substrate, the question of how the properties of free-standing, SL structures are affected if they are grown on a substrate is addressed. We also examine recent works treating the composite structures of GaN and AlN joined commensurately along their zigzag and armchair edges and forming heterostructures, δ-doping, single, and multiple quantum wells, as well as core/shell structures. Finally, outlooks and possible new research directions are briefly discussed. © 2018 Author(s).
Open Access
Hybrid functional calculated optical and electronic structures of thin anatase TiO2 nanowires with organic dye adsorbates
(Elsevier, 2015) Ünal, H.; Gunceler, D.; Gülseren, O.; Ellialtioğlu, Ş.; Mete, E.
The electronic and optical properties of thin anatase TiO2 (1 0 1) and (0 0 1) nanowires have been investigated using the screened Coulomb hybrid density functional calculations. For the bare nanowires with sub-nanometer diameters, the calculated band gaps are larger relative to the bulk values due to size effects. The role of organic light harvesting sensitizers on the absorption characteristics of the anatase nanowires has been examined using the hybrid density functional method incorporating partial exact exchange with range separation. For the lowest lying excitations, directional charge redistribution of tetrahydroquinoline (C2-1) dye shows a remarkably different profile in comparison to a simple molecule which is chosen as the coumarin skeleton. The binding modes and the adsorption energies of C2-1 dye and coumarin core on the anatase nanowires have been studied including non-linear solvation effetcs. The calculated optical and electronic properties of the nanowires with these two different types of sensitizers have been interpreted in terms of their electron-hole generation, charge carrier injection and recombination characteristics.
Open Access
Investigation of new two-dimensional materials derived from stanene
(Elsevier, 2017-09) Fadaie, M.; Shahtahmassebi, N.; Roknabad, M. R.; Gulseren, O.
In this study, we have explored new structures which are derived from stanene. In these new proposed structures, half of the Sn atoms, every other Sn atom in two-dimensional (2D) buckled hexagonal stanene structure, are replaced with a group- IV atom, namely C, Si or Ge. So, we investigate the structural, electronic and optical properties of SnC, SnGe and SnSi by means of density functional theory based first-principles calculations. Based on our structure optimization calculations, we conclude that while SnC assumes almost flat structure, the other ones have buckled geometry like stanene. In terms of the cohesive energy, SnC is the most stable structure among them. The electronic properties of these structures strongly depend on the substituted atom. We found that SnC is a large indirect band gap semiconductor, but SnSi and SnGe are direct band gap ones. Optical properties are investigated for two different polarization of light. In all structures considered in this study, the optical properties are anisotropic with respect to the polarization of light. While optical properties exhibit features at low energies for parallel polarization, there is sort of broad band at higher energies after 5 eV for perpendicular polarization of the light. This anisotropy is due to the 2D nature of the structures. © 2017 Elsevier B.V.
Open Access
Lateral and vertical heterostructures of h-GaN/h-AlN: electron confinement, band lineup, and quantum structures
(American Chemical Society, 2017-11) Onen, A.; Kecik, D.; Durgun, Engin; Çıracı, Salim
Lateral and vertical heterostructures constructed of two-dimensional (2D) single-layer h-GaN and h-AlN display novel electronic and optical properties and diverse quantum structures to be utilized in 2D device applications. Lateral heterostructures formed by periodically repeating narrow h-GaN and h-AlN stripes, which are joined commensurately along their armchair edges, behave as composite semiconducting materials. Direct-indirect characters of the fundamental band gaps and their values vary with the widths of these stripes. However, for relatively wider stripes, electronic states are confined in different stripes and make a semiconductor-semiconductor junction with normal band alignment. This way one-dimensinonal multiple quantum well structures can be generated with electrons and holes confined to h-GaN stripes. Vertical heterostructures formed by thin stacks of h-GaN and h-AlN are composite semiconductors with a tunable fundamental band gap. However, depending on the stacking sequence and number of constituent sheets in the stacks, the vertical heterostructure can transform into a junction, which displays staggered band alignment with electrons and holes separated in different stacks. The weak bonds between the cations and anions in adjacent layers distinguish these heterostructures from those fabricated using thin films of GaN and AlN thin films in wurtzite structure, as well as from van der Waals solids. Despite the complexities due to confinement effects and charge transfer across the interface, the band diagram of the heterostructures in the direct space and band lineup are conveniently revealed from the electronic structure projected to the atoms or layers. Prominent features in the optical spectra of the lateral composite structures are observed within the limits of those of 2D parent constituents; however, significant deviations from pristine 2D constituents are observed for vertical heterostructures. Important dimensionality effects are revealed in the lateral and vertical heterostructures.