Browsing by Subject "Electroabsorption"
Now showing 1 - 3 of 3
Results Per Page
Sort Options
Item Open Access Blue InGaN/GaN-based quantum electroabsorption modulators(IEEE, 2006) Sarı, Emre; Nizamoğlu, Sedat.; Özel, Tuncay; Demir, Hilmi VolkanWe introduce InGaN/GaN-based quantum electroabsorption modulator that incorporates ∼5 nm thick In0.35Ga0.65N/GaN quantum structures for operation in the blue spectral range of 420-430 nm. This device exhibits an optical absorption coefficient change of ∼6000 cm-1 below the band edge at highly transmissive, blue region (at λ peak=424 nm) with a 6 V swing and emits blue light (at λpeak=440 nm) with an optical output power of 0.35 mW at a 20 mA current injection level. Unlike infrared III-V quantum modulators, this blue modulator shows a blue shift in its electroabsorption (for λ < 418 nm) with increasing applied field accross it, due to high alternating polarization fields in its quantum structures; this electroabsorption behavior is opposite to the conventional quantum confined Stark effect that features common red shift. This device holds great promise for > 10 GHz optical clock injection directly into silicon CMOS chips in the blue because of its low parasitic in-series resistance (< 100 Ω) and the possibility to make smaller device mesas for low capacitance (1.2 fF for a 10μm×10μm mesa size). Considering high-speed operation and high responsivity of silicon-on-insulator (SOI) photodetectors in the blue range, unlike in the infrared, this approach eliminates the need for on-chip hybrid integration of Si CMOS with III-V photodetectors. Furthermore, the efficient electroluminescence of this device makes it feasible to consider on-chip blue laser-modulator integration for a compact optical clocking scheme. © 2006 IEEE.Item Open Access Photonic devices and systems embedded with nanocyrstals(SPIE, 2006) Demir, Hilmi Volkan; Soğancı, Ibrahim Murat; Mutlugun, Evren; Tek, Sümeyra; Huyal, Ilkem OzgeWe review our research work on the development of photonic devices and systems embedded with nanocyrstals for new functionality within EU Phoremost Network of Excellence on nanophotonics. Here we report on CdSe/ZnS nanocrystalbased hybrid optoelectronic devices and systems used for scintillation to enhance optical detection and imaging in the ultraviolet range and for optical modulation via electric field dependent optical absorption and photoluminescence in the visible. In our collaboration with DYO, we also present photocatalytic TiO2 nanoparticles incorporated in solgel matrix that are optically activated in the ultraviolet for the purpose of self-cleaning.Item Open Access Scalable wavelength-converting crossbar switches(IEEE, 2004-10) Demir, Hilmi Volkan; Sabnis, V. A.; Zheng, J. F.; Fidaner, O.; Harris, J. S.; Miller, D. A. B.We report scalable low-power wavelength-converting Crossbar switches that monolithically integrate two-dimensional compact arrays of surface-normal photodiodes with quantum-well waveguide modulators. We demonstrate proof-of-concept, electrically reconfigurable 2 x 2 crossbars that perform unconstrained wavelength conversion across 35 nm in the C-band (1530-1565 nm), using only <4.3-mW absorbed input optical power, and with 10-dB extinction ratio at 1.25 Gb/s. Such wavelength-converting crossbars provide complete flexibility to selectively convert any of the input wavelengths to any of the output wavelengths at high data bit rates in telecommunication, with the input and output wavelengths being arbitrarily chosen within the C-band.