Browsing by Subject "Diamonds"
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Item Open Access First-principles study of superlow friction between hydrogenated diamond surfaces(ASME, 2005) Çıracı, Salim; Dağ, SefaAttractive interaction between two clean diamond(001) slabs turns repulsive upon the hydrogenation of surfaces. Even under high loading forces, this repulsive interaction prevents the sliding surfaces from being closer to each other. As a result, calculated lateral force variation generated during sliding has small magnitude under high constant loading forces. Superlow friction observed earlier between diamond like carbon coated surfaces can be understood by the steady repulsive interaction between sliding surfaces, as well as strong and stiff carbon-carbon and carbon-hydrogen bonds which do not favor energy dissipation. In ambient conditions, the steady repulsive interaction is, however, destroyed by oxygenation of hydrogenated surface.Item Open Access Pseudopotential-based full zone k · p technique for indirect bandgap semiconductors: Si, Ge, diamond and SiC(TÜBİTAK, 2006) Bulutay, CeyhunThe k · p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. For completeness, a detailed formulation is provided where the associated k · p parameters are extracted from the local empirical pseudopotential method in the form of band edge energies and generalized momentum matrix elements. We demonstrate the systematic improvement of the technique with the proper choice of the band edge states for the group-IV indirect bandgap semiconductors: Si, Ge, diamond and SiC of the 30 cubic phase. The full zone agreement is observed to span an energy window of more than 20 eV for Si, and 40 eV for the diamond with the 15-band pseudopotential-based k · p approach. © TÜBİTAK.