Browsing by Subject "Device performance"

Now showing 1 - 7 of 7

Open Access
Enhanced Performance of Nanowire-Based All-TiO2 Solar Cells using Subnanometer-Thick Atomic Layer Deposited ZnO Embedded Layer
(Pergamon Press, 2015) Ghobadi, A.; Yavuz, H. I.; Ulusoy, T. G.; Icli, K. C.; Ozenbas, M.; Okyay, Ali Kemal
In this paper, the effect of angstrom-thick atomic layer deposited (ALD) ZnO embedded layer on photovoltaic (PV) performance of Nanowire-Based All-TiO2 solar cells has been systematically investigated. Our results indicate that by varying the thickness of ZnO layer the efficiency of the solar cell can be significantly changed. It is shown that the efficiency has its maximum for optimal thickness of 1 ALD cycle in which this ultrathin ZnO layer improves device performance through passivation of surface traps without hampering injection efficiency of photogenerated electrons. The mechanisms contributing to this unprecedented change in PV performance of the cell have been scrutinized and discussed.
Open Access
High-efficiency low-crosstalk dielectric metasurfaces of mid-wave infrared focal plane arrays
(American Institute of Physics Inc., 2017) Akın, O.; Demir, Hilmi Volkan
High-resolution compact-size focal plane arrays (FPAs) suffer the fundamental geometrical tradeoff between the optical resolution (pixel size miniaturization) and the optical crosstalk (spillover of neighboring pixel focusing). For FPAs, our previously reported metallic metasurfaces reached an unprecedented level of crosstalk suppression. However, practical utilization of these metallic microlens arrays has proved to be intrinsically limited due to the low device efficiency (of the order of 0.10) resulting from the fundamental absorption losses of metals and their cross-polarization scheme. Exceeding this limit, here we show highly efficient microlens designs enabled by dielectric metasurfaces for mid-wave infrared (MWIR) operation. These dielectric MWIR FPAs allow for a substantially high device efficiency over 0.80 without compromising the optical crosstalk performance. Systematically studying dielectric nanoantennas of silicon nanodisks that do not dictate the cross-polarization scheme using full-wave solutions, we found that the optical crosstalk is suppressed to low levels ≤ 3.0% while sustaining the high efficiency. A figure-of-merit (FoM) defined for the device performance as the focusing efficiency per optical crosstalk times the f-number achieves 84, which is superior to all other types of MWIR FPAs reported to date, all falling below a maximum FoM of 70. These findings indicate that the proposed approach can pave the way for the practical usage of metasurface microlens arrays in MWIR.
Open Access
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
(IEEE, 2016) Bosi G.; Raffo A.; Vadalà V.; Trevisan F.; Vannini G.; Cengiz, Ömer; Şen, Özlem; Özbay, Ekmel
In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes. © 2016 European Microwave Association.
Open Access
Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer
(AVS Science and Technology Society, 2015) Kumar, M.; Tekcan, B.; Okyay, Ali Kemal
The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO2 is significantly reduced by more than two orders of magnitude compared to those without HfO2 insertion. The photoresponsivity at 360 nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO2 on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time. © 2015 American Vacuum Society.
Open Access
Plasmonically enhanced ZnO thin-film-photo-transistor with dynamic responsivity control
(IEEE, 2013) Özcan, Ayşe; Battal, Enes; Atar, Fatih Bilge; Okyay, Ali Kemal
We fabricated an ZnO based thin-film photo-transistor with electrically tunable photo-responsivity operating in the UV and visible spectra and designed plasmonic structures enhancing the device performance up to 6 folds below the band-gap of ZnO. © 2013 IEEE.
Open Access
Postdeposition annealing on RF-sputtered SrTiO3 thin films
(AVS Science and Technology Society, 2017) Bayrak, T.; Kizir,S.; Kahveci, E.; Bıyıklı, N.; Goldenberg, E.
Understanding of structural, optical, and electrical properties of thin films are very important for a reliable device performance. In the present work, the effect of postdeposition annealing on stoichiometric SrTiO3 (STO) thin films grown by radio frequency magnetron sputtering at room temperature on p-type Si (100) and quartz substrates were studied. Highly transparent and well adhered thin films were obtained in visible and near infrared regions. As-deposited films were amorphous, while nanocrystalline and polycrystalline phases of the STO thin films formed as a function of annealing temperature. Films annealed at 300 ï¿½C showed nanocrystallinity with some amorphous phase. Crystallization started after 15 min annealing at 700 ï¿½C, and further improved for films annealed at 800 ï¿½C. However, crystallinity reduced for films which were annealed at 900 ï¿½C. The optical and electrical properties of STO thin films affected by postdeposition annealing at 800 ï¿½C: Eg values decreased from 4.50 to 4.18 eV, n(λ) values (at 550 nm) increased from 1.81 to 2.16. The surface roughness increased with the annealing temperature due to the increased crystallite size, densification and following void formation which can be seen from the scanning electron microscopy images. The highest dielectric constants (46 at 100 kHz) observed for films annealed at 800 ï¿½C; however, it was lower for 300 ï¿½C annealed (25 at 100 kHz) and as-deposited (7 at 100 kHz) STO films having ∼80 nm thickness.
Open Access
Self-assembled peptide nanofiber templated ALD growth of TiO2 and ZnO semiconductor nanonetworks
(Wiley - V C H Verlag GmbH & Co. KGaA, 2016) Garifullin, R.; Eren, H.; Ulusoy, T. G.; Okyay, Ali Kemal; Bıyıklı, Necmi; Güler, Mustafa O.
Here peptide amphiphile (PA) nanofiber network is exploited as a three‐dimensional soft template to construct anatase TiO2 and wurtzite ZnO nanonetworks. Atomic layer deposition (ALD) technique is used to coat the organic nanonetwork template with TiO2and ZnO. ALD method enables uniform and conformal coatings with precisely controlled TiO2 and ZnO thickness. The resulting semiconducting metal oxide nanonetworks are utilized as anodic materials in dye‐sensitized solar cells. Effect of metal oxide layer thickness on device performance is studied. The devices based on thin TiO2 coatings (<10 nm) demonstrate considerable dependence on material thickness, whereas thicker (>17 nm) ZnO‐based devices do not show an explicit correlation.