Browsing by Subject "Device efficiency"

Filter results by typing the first few letters
Now showing 1 - 3 of 3
  • Thumbnail Image
    ItemOpen Access
    Observation of biexcitons in the presence of trions generated via sequential absorption of multiple photons in colloidal quantum dot solids
    (IEEE, 2012) Cihan, Ahmet Fatih; Hernandez-Martinez Pedro L.; Kelestemur, Yusuf; Demir, Hilmi Volkan
    Multi exciton generation (MEG) and multi exciton recombination (MER) in semiconductor quantum dots (QDs) have recently attracted significant scientific interest as a possible means to improve device efficiencies [1-5]. Convenient bandgap tunability, easy colloidal synthesis, and solution-based processability of these QDs make them further attractive for such device applications using MEG and MER. For example, recent theoretical and experimental studies have shown that MEG enables >100% peak external quantum efficiency where the generated multi excitons (MEs) are collected in a simple QD solar cell structure [1]. Furthermore, MEG has also been shown in QD photodetectors exhibiting substantially increased photocurrent levels [2]. Another promising application for MEs is the use of QDs as an alternative gain medium based on MER for lasers. Although MEG is very promising and supported with quite persuasive reports, there are still some debatable issues that need to be clarified. One of the issues that have generated great debates in the field has been the confusion of MER with the recombination of trions, which takes place in photocharged QDs. To utilize MEG and MER in practical devices such as QD solar cells and QD lasing devices, these phenomena need to be well understood. Here, we showed distinct spectrally-resolved temporal behavior of biexciton (BX), single exciton (X) and trion radiative recombinations in near unity quantum yield (QY) quasi-type II CdSe/CdS core/shell nanocrystal QDs. Upon sequential absorption of multiple photons, the extraction of Xs, BXs, and trions were achieved using time correlated single photon counting (TCSPC) measurements performed on low concentration thin film samples of these QDs at different emission wavelengths. The QDs were embedded in PMMA medium to obtain homogeneous samples and avoid Förster-type nonradiative energy transfer (NRET) between them. Here to extract Xs, BXs, and trions, we devised a new analysis approach for the time decays of the QDs that allowed us to attribute the physical events to their corresponding time decay terms, which were further verified with their excitation intensity dependencies [6]. © 2012 IEEE.
  • Thumbnail Image
    ItemOpen Access
    On the hole accelerator for III-nitride light-emitting diodes
    (American Institute of Physics Inc., 2016) Zhang Z.-H.; Zhang, Y.; Bi, W.; Geng, C.; Xu S.; Demir, Hilmi Volkan; Sun, X. W.
    In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1-xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1-xN layer, and the thickness for the p-GaN layer and the p-AlxGa1-xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1-xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1-xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1-xN design, and the hole accelerator can effectively increase the hole injection if properly designed.
  • Thumbnail Image
    ItemOpen Access
    Plasmonically enhanced hot electron based photovoltaic device
    (Optical Society of American (OSA), 2013) Atar F.B.; Battal, E.; Aygun L.E.; Daglar, B.; Bayındır, Mehmet; Okyay, Ali Kemal
    Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal (MIM) junction for electron collection and the plasmon exciting MIM structure on top of each other, which provides high flexibility in plasmonic design and tunneling MIM design separately. We demonstrate close to one order of magnitude enhancement in the short circuit current at the resonance wavelengths. © 2013 Optical Society of America.