Browsing by Subject "Density distributions"

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Open Access
Effect of disorder on the interacting fermi gases in a one-dimensional optical lattice
(World Scientific Publishing Co., 2008) Xianlong, G.; Polini, M.; Tosi, M. P.; Tanatar, Bilal
Interacting two-component Fermi gases loaded in a one-dimensional (1D) lattice and subjected to a harmonic trapping potential exhibit interesting compound phases in which fluid regions coexist with local Mott-insulator and/or band-insulator regions. Motivated by experiments on cold atoms inside disordered optical lattices, we present a theoretical study of the effects of a correlated random potential on these ground-state phases. We employ a lattice version of density-functional theory within the local-density approximation to determine the density distribution of fermions in these phases. The exchange-correlation potential is obtained from the Lieb-Wu exact solution of Fermi-Hubbard model. On-site disorder (with and without Gaussian correlations) and harmonic trap are treated as external potentials. We find that disorder has two main effects: (i) it destroys the local insulating regions if it is suffciently strong compared with the on-site atom-atom repulsion, and (ii) it induces an anomaly in the inverse compressibility at low density from quenching of percolation. For suffciently large disorder correlation length the enhancement in the inverse compressibility diminishes.
Open Access
On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures
(Elsevier, 2010-10-12) Tekeli, Z.; Gökçen, M.; Altindal, Ş.; Özçelik, S.; Özbay, Ekmel
The voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and real and imaginary part of electrical modulus (Μ′ and M″) of the (Ni/Au)/GaN/Al0.3Ga 0.7N heterostructures have been investigated by using experimental admittance spectroscopy (capacitance-voltage (C-V) and conductance-voltage (G/w-V)) measurements at room temperature. Experimental results show that the values of the ε′, ε″, tan δ and the real and imaginary parts of the electric modulus (M′ and M″) obtained from the C and G/w measurements were found to be strong function of frequency and applied bias voltage especially in depletion region at low frequencies. These changes in dielectric parameters can be attributed to the interfacial GaN cap layer, interface polarization and a continuous density distribution of interface states and their relaxation time at metal/semiconductor interface. While the values of the ε ′ decrease with increasing frequencies, tan δ,M′ and M″ increase with the increasing frequency. Also, the dielectric loss (ε″) have a local maximum at about frequency of 100 kHz. It can be concluded that the interface polarization can occur more easily at low frequencies with the number of interface states located at the metal/semiconductor interface.