Browsing by Subject "Bismuth-oxy-selenide"

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    Low-temperature and high-quality growth of Bi2O2Se layered semiconductors via cracking metal–organic chemical vapor deposition
    (American Chemical Society, 2021-05-25) Kang, M.; Chai, H. J.; Jeong, H. B.; Park, C.; Jung, In-Y.; Park, E.; Çiçek, Mert Miraç; Lee, I.; Bae, B. S.; Durgun, Engin; Kwak, J. Y.; Song, S.; Choi, S. Y.; Jeong, Hu Y.; Kang, K.
    Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi2O2Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi2O2Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal–organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi2O2Se. The resulting Bi2O2Se films at very low growth temperature (∼300 °C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi2O2Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm2/(V·s) and photoresponsivity of 45134 A/W.