Browsing by Subject "Bias conditions"

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    ItemOpen Access
    An improved lumped element nonlinear circuit model for a circular CMUT cell
    (IEEE, 2012) Köymen, Hayrettin; Atalar, Abdullah; Aydogdu, E.; Kocabas, C.; Oguz, H. K.; Olcum, S.; Ozgurluk, A.; Unlugedik, A.
    This paper describes a correction and an extension in the previously published large signal equivalent circuit model for a circular capacitive micromachined ultrasonic transducer (CMUT) cell. The force model is rederived so that the energy and power is preserved in the equivalent circuit model. The model is able to predict the entire behavior of CMUT until the membrane touches the substrate. Many intrinsic properties of the CMUT cell, such as the collapse condition, collapse voltage, the voltage-displacement interrelation and the force equilibrium before and after collapse voltage in the presence of external static force, are obtained as a direct consequence of the model. The small signal equivalent circuit for any bias condition is obtained from the large signal model. The model can be implemented in circuit simulation tools and model predictions are in excellent agreement with finite element method simulations.
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    ItemOpen Access
    On-chip characterization of THz Schottky diodes using non-contact probes
    (IEEE Computer Society, 2016) Khan, T. M.; Ghobadi, A.; Celik, O.; Caglayan, C.; Bıyıklı, Necmi; Okyay, Ali Kemal; Topalli, K.; Sertel, K.
    We present non-contact characterization of GaAs Schottky contacts in the 140-220 GHz band. The non-contact probing technique utilizes planar on-chip antennas that are monolithically integrated with the coplanar waveguide environment housing the Schottky diode under test. The diode contact is fabricated through a 6 mask lithographic process with a 5 μm deep-trench under the contact to minimize parasitics and extend operation into the THz band. A quasi-optical link between the VNA ports and on-chip probe antennas enables efficient signal coupling into the test device. The non-contact probe station is calibrated using on-chip quick-offset-short method and the effectiveness of this approach is demonstrated for integrated diodes for under various bias conditions.