Advanced Research Laboratories (ARL)

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Browsing Advanced Research Laboratories (ARL) by Subject "Annealing temperatures"

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    Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
    (AIP Publishing, 2008-02) Akça, İmran B.; Dâna, Aykutlu; Aydınlı, Atilla; Turan, R.
    Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.
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    Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models
    (Wiley, 2008-05) Basa, P.; Petrik, P.; Fried, M.; Dâna, Aykutlu; Aydınlı, Atilla; Foss, S.; Finstad, T. G.
    Ge-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured and evaluated by spectroscopic ellipsometry. Effective medium theory (EMT) and parametric semiconductor models have been used to model the dielectric function of the layers. Systematic dependences of the layer thickness and the oscillator parameters have been found on the annealing temperature (nanocrystal size).