Browsing by Author "Zheng, J. F."

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Open Access
Integrated photonic switches for nanosecond packet-switched optical wavelength conversion
(Optical Society of America, 2006) Fidaner, O.; Demir, Hilmi Volkan; Sabnis, V. A.; Zheng, J. F.; Harris, J. S.; Miller, D. A. B.
We present a multifunctional photonic switch that monolithically integrates an InGaAsP/InP quantum well electroabsorption modulator and an InGaAs photodiode as a part of an on-chip, InP optoelectronic circuit. The optical multifunctionality of the switch offers many configurations to allow for different optical network functions on a single chip. Here we experimentally demonstrate GHz-range optical wavelength-converting switching with only ~10 mW of absorbed input optical power, electronically controlled packet switching with a reconfiguration time of <2.5 ns, and optically controlled packet switching in <300 ps. ©2006 Optical Society of America
Open Access
Scalable wavelength-converting crossbar switches
(IEEE, 2004-10) Demir, Hilmi Volkan; Sabnis, V. A.; Zheng, J. F.; Fidaner, O.; Harris, J. S.; Miller, D. A. B.
We report scalable low-power wavelength-converting Crossbar switches that monolithically integrate two-dimensional compact arrays of surface-normal photodiodes with quantum-well waveguide modulators. We demonstrate proof-of-concept, electrically reconfigurable 2 x 2 crossbars that perform unconstrained wavelength conversion across 35 nm in the C-band (1530-1565 nm), using only <4.3-mW absorbed input optical power, and with 10-dB extinction ratio at 1.25 Gb/s. Such wavelength-converting crossbars provide complete flexibility to selectively convert any of the input wavelengths to any of the output wavelengths at high data bit rates in telecommunication, with the input and output wavelengths being arbitrarily chosen within the C-band.
Open Access
Self-aligned via and trench for metal contact in III-V semiconductor devices
(AIP Publishing LLC, 2006) Zheng, J. F.; Demir, Hilmi Volkan; Sabnis, V.A.; Fidaner, O.; Harris, J.S.; Miller, D. A. B.
A semiconductor processing method for the formation of self-aligned via and trench structures in III-V semiconductor devices (in particular, on InP platform) is presented, together with fabrication results. As a template for such self-aligned via and trench formations in a surrounding polymer layer on a semiconductor device, we make use of a sacrificial layer that consists of either a Si O2 dielectric hard mask layer deposited on the device layers or a sacrificial semiconductor layer grown on top of the device epitaxial layers (e.g., InP on an InGaAs etch stop), both laid down on the device layers before patterning the device geometry. During the semiconductor device etching, the sacrificial layer is kept as a part of the patterned structures and is, therefore, perfectly self-aligned. By selectively removing the sacrificial layer surrounded by the polymer that is etched back within the thickness of the sacrificial layer, an opening such as a via and a trench is formed perfectly self-aligned on the device top area in the place of the sacrificial layer. This process yields a pristine semiconductor surface for metal contacts and fully utilizes the contact area available on the device top, no matter how small the device area is. This approach thus provides as low an Ohmic contact resistance as possible upon filling the via and the trench with metal deposition. The additional use of a thin Si3 N4 protecting layer surrounding the device sidewalls improves the robustness of the process without any undesired impact on the device electrical passivation (or on the optical mode characteristics if the device also includes a waveguide). This method offers metal contacts scalable to the device size, being limited only by the feasible device size itself. This method is also applicable to the fabrication of other III-V based integrated devices.