Browsing by Author "Yu, H. B."

Filter results by typing the first few letters
Now showing 1 - 1 of 1
  • Thumbnail Image
    ItemOpen Access
    Solar-blind AlxGa1-xN-based avalanche photodiodes
    (American Institute of Physics, 2005) Tut, T.; Butun, S.; Butun, B.; Gokkavas, M.; Yu, H. B.; Özbay, Ekmel
    We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 mu m diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10(-16) W/Hz(1/2).