Browsing by Author "Yelboga, T."

Filter results by typing the first few letters
Now showing 1 - 2 of 2
  • Thumbnail Image
    ItemOpen Access
    High-performance visible-blind GaN-based p-i-n photodetectors
    (AIP Publishing LLC, 2008) Butun, B.; Tut, T.; Ulker, E.; Yelboga, T.; Özbay, Ekmel
    We report high performance visible-blind GaN-based p-i-n photodetectors grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was measured to be lower than 20 pA for bias voltages up to 5 V. The breakdown voltages were higher than 120 V. The responsivity of the photodetectors was ∼0.23 AW at 356 nm under 5 V bias. The ultraviolet-visible rejection ratio was 6.7× 103 for wavelengths longer than 400 nm.
  • Thumbnail Image
    ItemOpen Access
    Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity
    (AIP Publishing LLC, 2008) Tut, T.; Yelboga, T.; Ulker, E.; Özbay, Ekmel
    We report on the high performance solar-blind AlGaN-based p-i-n photodetectors that are grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was measured to be on the order of 5 fA for bias voltages up to 10 V. The breakdown voltages were higher than 200 V. The responsivities of the photodetectors were 0.052 and 0.093 AW at 280 nm under 0 and 40 V reverse biases, respectively. We achieved a detectivity of 7.5× 1014 cm Hz12 W for 200 μm diameter AlGaN p-i-n detectors.