Browsing by Author "Kecik, Deniz"

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Open Access
Chemical and substitutional doping, and anti-site and vacancy formation in monolayer AlN and GaN
(Royal Society of Chemistry, 2018) Kadıoğlu, Yelda; Ersan, Fatih; Kecik, Deniz; Aktürk, O. Ü.; Aktürk, E.; Çıracı, Salim
We investigated the effects of chemical/substitutional doping, hydrogenation, and anti-site and vacancy defects on the atomic, optoelectronic and magnetic properties of AlN and GaN monolayers. Upon doping of selected atoms, AlN and GaN monolayers can acquire magnetic properties, and their fundamental band gaps are modified by the localized gap states. Spin-polarized gap states broaden into bands at patterned coverage of adatoms, whereby half-metallic or magnetic semiconducting properties can be attained. Specific adatoms adsorbed to Ga atoms break the nearest vertical Ga-N bonds in the GaN bilayer in the heackelite structure and result in changes in the electronic and atomic structure. While adjacent and distant pairs of anion + cation vacancies induce spin polarization with filled and empty gap states, anti-site defects remain nonmagnetic; but both defects induce dramatic changes in the band gap. Fully hydrogenated monolayers are stable only for specific buckled geometries, where one geometry can also lead to an indirect to direct band gap transition. Also, optical activity shifts to the ultra-violet region upon hydrogenation of the monolayers. While H2 and O2 molecules are readily physisorbed on the surfaces of the monolayers with weak van der Waals attraction, they can be dissociated into constituent atoms at the vacancy site of the cation. Our study performed within density functional theory shows that the electronic, magnetic and optical properties of AlN and GaN monolayers can be tuned by doping and point defect formation in order to acquire diverse functionalities.
Open Access
Structure dependent optoelectronic properties of monolayer antimonene, bismuthene and their binary compound
(Royal Society of Chemistry, 2019) Kecik, Deniz; Özçelik, V. O.; Durgun, Engin; Çıracı, Salim
Two-dimensional (2D) antimonene, bismuthene, and their binary compound 2D BiSb possess high spin–orbit coupling (SOC) and potential topological insulator properties upon engineering their structural and chemical properties. Based on many-body first-principles calculations, we show that these materials can exhibit isotropic or anisotropic optoelectronic properties depending on their geometry, i.e. buckled (hb) or asymmetrical washboard (aw) phases. SOC significantly alters their optoelectronic properties, which is predominantly evident in 2D bismuthene. hb-antimonene absorbs light in the visible and partially in the ultraviolet regimes, while the absorption band edge for aw-antimonene, hb- and aw-bismuthene is set at the infrared region, absorption being spread as a broadband optical response through the spectral range. An exciton binding with 0.18 eV energy is detected for hb-bismuthene. Due to their broadband optical response, antimonene, bismuthene, and their binary compound offer possibilities towards applications as 2D materials in solar cells, light-emitting devices, photodetectors and light modulation.