Browsing by Author "Kang, X."
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Item Open Access Effect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodes(Elsevier B. V., 2018-04) Zhu, B.; Zhang, Z.; Tan, S. T.; Lu, S.; Zhang, Y.; Kang, X.; Wang, N.; Hasanov, N.; Demir, Hilmi VolkanIn this work, we report how the Mg doping in the barriers affects the electrical performance of InGaN/GaN-based light-emitting diodes. When compared with the reference device that does not have Mg doped quantum barriers, the turn-on voltage for the proposed device is reduced and the electrical thermal stability is improved. The superior electrical performance is analyzed through the temperature dependent current-voltage and capacitance-voltage characteristics. Meanwhile a reduced depletion length and increased acceptor concentration are achieved in the control devices which is consistent with the simulated results.Item Open Access Modulating ohmic contact through InGaxNyOz interfacial layer for high-performance InGaN/GaN-based light-emitting diodes(Institute of Electrical and Electronics Engineers Inc., 2016) Zhu B.; Tan S.T.; Liu W.; Lu S.; Zhang, Y.; Chen, S.; Hasanov N.; Kang, X.; Demir, Hilmi VolkanWe report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through the design and the formation of the InGaxNyOz interfacial layer, which maintains high reflectivity of silver and forms good ohmic contact between pristine silver and p-GaN. The interfacial layer was designed and formed by depositing a thin layer of indium tin oxide (ITO) on top of p-GaN, followed by thermal annealing, to enable the interdiffusion and the intermixing of In, Sn, Ga, O, and N atoms. Both electrical and optical performances of the LED with the optimized InGaxNyOz interfacial layer are improved, thus achieving the highest wall-plug efficiency, compared with those LEDs with and without ITO layers at operation current.