Browsing by Author "Delikanli S."

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Open Access
Low-threshold lasing from colloidal CdSe/CdSeTe core/alloyed-crown type-II heteronanoplatelets
(Royal Society of Chemistry, 2018) Gao, Y.; Li, M.; Delikanli S.; Zheng, H.; Liu, B.; Dang C.; Sum, T. C.; Demir, Hilmi Volkan
Colloidal type-II heterostructures are believed to be a promising solution-processed gain medium given their spatially separated electrons and holes for the suppression of Auger recombination and their wider emission tuning range from the visible to near-infrared region. Amplified spontaneous emission (ASE) was achieved from colloidal type-II core/shell nanocrystals several years ago. However, due to the limited charge-transfer (CT) interfacial states and minimal overlap of electron and hole wave functions, the ASE threshold has still been very high. Herein, we achieved ASE through type-II recombination at a lower threshold using CdSe/CdSeTe core/alloyed-crown nanoplatelets. Random lasing was also demonstrated in the film of these nanoplatelets under sub-ns laser-pumping. Through a detailed carrier dynamics investigation using femtosecond transient absorption, steady state, and time-resolved photoluminescence (PL) spectroscopies, we confirmed the type-II band alignment, and found that compared with normal CdSe/CdTe core/crown nanoplatelets (where no ASE/lasing was observed), CdSe/CdSeTe core/alloyed-crown nanoplatelets had a much higher PL quantum yield (75% vs. 31%), a ∼5-fold larger density of type-II charge-transfer states, a faster carrier transfer to interfaces (0.32 ps vs. 0.61 ps) and a slower Auger recombination lifetime (360 ps vs. 160 ps). Compared with CdSe/CdTe nanoplatelets, their counterparts with an alloyed crown boast a promoted charge transfer process, higher luminescence quantum yield, and smaller Auger rate, which results in their excellent application potential in solution-processed lasers and light-emitting devices.
Open Access
Nanocrystal light-emitting diodes based on type II nanoplatelets
(Elsevier BV, 2018) Liu, B.; Delikanli S.; Gao, Y.; Dede, D.; Gungor K.; Demir, Hilmi Volkan
Colloidal semiconductor nanoplatelets (NPLs) have recently emerged as a new family of semiconductor nanocrystals with distinctive structural and electronic properties originating from their atomically flat architecture. To date, type II NPLs have been demonstrated to possess great potential to optoelectronic applications, such as solar cells and lasers. Herein, nanocrystal light-emitting diodes (LEDs) based on type II NPLs have been developed. The photoluminescence quantum yield of these used type II NPL (CdSe/CdSe0.8Te0.2 core/crown) is close to 85%. By exploring an effective inverted structure with the dual hole transport layer, the NPL-LEDs exhibit i) a turn-on voltage of 1.9 V, ii) a maximum luminance of 34520 cd m−2, iii) an EQE of 3.57% and a PE of 9.44 lm W−1. Compared with previous NPL-based LEDs, the performance of our devices is remarkably enhanced. For example, the luminance is 350-fold higher than the best inverted NPL-based LED. The findings may not only represent a significant step for NPL-based LEDs, but also unlock a new opportunity that this class of type II NPLs materials are promising for developing high-performance LEDs.
Open Access
Near-unity emitting copper-doped colloidal semiconductor quantum wells for luminescent solar concentrators
(Wiley-VCH Verlag, 2017) Sharma, M.; Gungor K.; Yeltik A.; Olutas M.; Guzelturk, B.; Kelestemur Y.; Erdem, T.; Delikanli S.; McBride, J. R.; Demir, Hilmi Volkan
Doping of bulk semiconductors has revealed widespread success in optoelectronic applications. In the past few decades, substantial effort has been engaged for doping at the nanoscale. Recently, doped colloidal quantum dots (CQDs) have been demonstrated to be promising materials for luminescent solar concentrators (LSCs) as they can be engineered for providing highly tunable and Stokes-shifted emission in the solar spectrum. However, existing doped CQDs that are aimed for full solar spectrum LSCs suffer from moderately low quantum efficiency, intrinsically small absorption cross-section, and gradually increasing absorption profiles coinciding with the emission spectrum, which together fundamentally limit their effective usage. Here, the authors show the first account of copper doping into atomically flat colloidal quantum wells (CQWs). In addition to Stokes-shifted and tunable dopant-induced photoluminescence emission, the copper doping into CQWs enables near-unity quantum efficiencies (up to ≈97%), accompanied by substantially high absorption cross-section and inherently step-like absorption profile, compared to those of the doped CQDs. Based on these exceptional properties, the authors have demonstrated by both experimental analysis and numerical modeling that these newly synthesized doped CQWs are excellent candidates for LSCs. These findings may open new directions for deployment of doped CQWs in LSCs for advanced solar light harvesting technologies.
Open Access
Time-resolved photoluminescence study of CdSe/CdMnS/CdS core/multi-shell nanoplatelets
(American Institute of Physics Inc., 2016) Murphy, J. R.; Delikanli S.; Scrace, T.; Zhang, P.; Norden, T.; Thomay, T.; Cartwright, A. N.; Demir, Hilmi Volkan; Petrou, A.
We used photoluminescence spectroscopy to resolve two emission features in CdSe/CdMnS/CdS and CdSe/CdS core/multi-shell nanoplatelet heterostructures. The photoluminescence from the magnetic sample has a positive circular polarization with a maximum centered at the position of the lower energy feature. The higher energy feature has a corresponding signature in the absorption spectrum; this is not the case for the low-energy feature. We have also studied the temporal evolution of these features using a pulsed-excitation/time-resolved photoluminescence technique to investigate their corresponding recombination channels. A model was used to analyze the temporal dynamics of the photoluminescence which yielded two distinct timescales associated with these recombination channels. The above results indicate that the low-energy feature is associated with recombination of electrons with holes localized at the core/shell interfaces; the high-energy feature, on the other hand, is excitonic in nature with the holes confined within the CdSe cores.