Browsing by Author "Baş, Y."
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Item Open Access Examination of the temperature related structural defects of InGaN/GaN solar cells(Academic Press, 2015) Durukan, İ. K.; Bayal, Ö.; Kurtuluş, G.; Baş, Y.; Gültekin, A.; Öztürk, M. K.; Çörekçi, S.; Tamer, M.; Özçelik, S.; Özbay, EkmelIn this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution X-ray Diffraction (HRXRD) and an Atomic Force Microscope (AFM). The plane angles, mosaic crystal sizes, mixed stress, dislocation intensities of the structure of the GaN and InGaN layers are determined. According to the test results, there are no general characteristic trends observed due to temperature at both structures. There are fluctuating failures determined at both structures as of 350 °C. The defect density increased on the GaN layer starting from 350 °C and reaching above 400 °C. A similar trend is observed on the InGaN layer, too.Item Open Access Microstructural analysis with graded and non-graded indium in InGaN solar cell(American Scientific Publishers, 2017) Durukan, I. K.; Öztürk, M. K.; Çörekçi, S.; Tamer, M.; Baş, Y.; Özçelik, S.; Özbay, EkmelIn this study are graded and non graded InGaN/GaN samples grown on c-oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural and morphological properties of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X-ray Diffraction (HRXRD), atomic force microscopy (AFM). Each structures c and a lattice parameters strain, biaxial strain, hydrostatic strain, stress, lattice relax, tilt angle, mosaic crystal size, dislocation densities of GaN and InGaN layers are determined by XRD measurements. In accordance with these calculations, the effect of graded structure on the defects, are discussed. As a dramatic result; although values of full width at half maximum (FWHM) are broad, a considerable decrease at dislocations is noticed. The AFM observations have revealed that the two dimensional growth of the graded sample is more significant and its roughness value is lower. JV measurements shown that the performance of the graded structure is higher. It is determined that all test results are consistent with each other.