Institute of Materials Science and Nanotechnology (UNAM)

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Browsing Institute of Materials Science and Nanotechnology (UNAM) by Author "Abboud, Mohammad"

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    Investigation of anisotropic mechanical, electronic, and charge carrier transport properties of germanium-pnictogen monolayers
    (Institute of Physics Publishing Ltd., 2022-02-04) Abboud, Mohammad; Özbey, Doğukan Hazar; Kılıç, M. E.; Durgun, Engin
    Recently, novel two-dimensional (2D) GeP and GeAs systems have been fabricated by mechanical exfoliation and utilized in various applications. These developments have brought the 2D germanium-pnictogens, C2/m-GeX (X = N, P, As, Sb, and Bi) structures into the limelight. In this study, we systematically investigate the structural, mechanical, electronic, and charge carrier transport properties of GeX monolayers by using first-principles methods. Our results show that the considered systems are dynamically stable and possess anisotropic physical properties. Examined structures are found to be flexible, and their mechanical strength and stiffness decrease down the group-V, in line with the trends of the bond strength, cohesive energy, charge transfer, and electron localization function. Additionally, the zigzag in-plane direction is mechanically superior to the armchair direction. The electronic band structure calculations based on HSE06 hybrid functional with the inclusion of spin–orbit coupling indicate that GeX monolayers are either direct or quasi-direct semiconductors with band gaps lying within the infrared and visible spectrum. The estimated charge carrier mobilities are highly anisotropic and also differ significantly depending on the structure and carrier type. These unique properties render GeX monolayers as suitable 2D materials for flexible nanoelectronic applications.
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    Strain-induced structural phase transition in GeN monolayer
    (Elsevier BV, 2021-11-30) Abboud, Mohammad; Özbey, D.H.; Durgun, Engin
    The recent synthesis of SiP, SiAs, GeP, and GeAs monolayers has brought two-dimensional (2D) group IV–V systems into the limelight. To date, all the fabricated structures of this class belong to the C2/m space group which has a low structural symmetry, while the class could exist in more symmetric phases (i.e., P3m1 and P6m2). The realization of more symmetric phases can enhance the intrinsic properties of these materials and increase their potential field of usage. In this study, the possibility of a structural phase transition in GeN monolayer by application of mechanical strain is investigated. Based on ab initio simulations, we first confirm the stability of the GeN monolayer in all phases, then demonstrate how a large enough compressive strain (~%12) can transform C2/m into P3m1 phase. The results are interpreted by analyzing the geometry, bond order, electron localization functions, and net atomic charges of the structures. Upon transition into the P3m1 phase, tensile strength and in-plane stiffness double, while the compressive strength quadruples. On the other hand, the effect of the phase transition on the electronic properties is not substantial and similar band structure profiles with narrowed band gap are obtained. Our study provides insight on how to experimentally achieve the P3m1 phase of the GeN monolayer, which is in principle applicable to other group IV–V monolayers under suitable conditions involving the optimization of pressure, temperature, and impurity concentration. These unique features of the GeN monolayer render them ideal candidates for a variety of high technological nanoscale applications.