Nanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymers

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage106119en_US
dc.citation.issueNumber108en_US
dc.citation.spage106109en_US
dc.citation.volumeNumber6en_US
dc.contributor.authorHaider A.en_US
dc.contributor.authorYilmaz, M.en_US
dc.contributor.authorDeminskyi, P.en_US
dc.contributor.authorEren, H.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2018-04-12T10:47:54Z
dc.date.available2018-04-12T10:47:54Z
dc.date.issued2016en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractHere, we report nano-patterning of TiO2via area selective atomic layer deposition (AS-ALD) using an e-beam patterned growth inhibition polymer. Poly(methylmethacrylate) (PMMA), polyvinylpyrrolidone (PVP), and octafluorocyclobutane (C4F8) were the polymeric materials studied where PMMA and PVP were deposited using spin coating and C4F8 was grown using inductively coupled plasma (ICP) polymerization. TiO2 was grown at 150 °C using tetrakis(dimethylamido) titanium (TDMAT) and H2O as titanium and oxygen precursors, respectively. Contact angle, scanning electron microscopy (SEM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy (XPS) measurements were performed to investigate the blocking/inhibition effectiveness of polymer layers for AS-ALD of TiO2. TiO2 was grown with different numbers of growth cycles (maximum = 1200 cycles) on PMMA, PVP, and C4F8 coated substrates, where PMMA revealed complete growth inhibition up to the maximum number of growth cycles. On the other hand, PVP was able to block TiO2 growth up to 300 growth cycles only, whereas C4F8 showed no TiO2-growth blocking capability. Finally, mm-, μm-, and nm-scale patterned selective deposition of TiO2 was demonstrated exploiting a PMMA masking layer that has been patterned using e-beam lithography. SEM, energy-dispersive X-ray spectroscopy (EDX) line scan, EDX elemental mapping, and XPS line scan measurements cumulatively confirmed the self-aligned deposition of TiO2 features. The results presented for the first time demonstrate the feasibility of achieving self-aligned TiO2 deposition via TDMAT/H2O precursor combination and e-beam patterned PMMA blocking layers with a complete inhibition for >50 nm-thick films.en_US
dc.identifier.doi10.1039/c6ra23923den_US
dc.identifier.issn2046-2069
dc.identifier.urihttp://hdl.handle.net/11693/36670
dc.language.isoEnglishen_US
dc.publisherRoyal Society of Chemistryen_US
dc.relation.isversionofhttps://doi.org/10.1039/c6ra23923den_US
dc.source.titleRSC Advancesen_US
dc.subjectDepositionen_US
dc.subjectEnergy dispersive spectroscopyen_US
dc.subjectInductively coupled plasmaen_US
dc.subjectPlasma polymerizationen_US
dc.subjectPlastic coatingsen_US
dc.subjectScanning electron microscopyen_US
dc.subjectSpectroscopic ellipsometryen_US
dc.subjectThick filmsen_US
dc.subjectTitaniumen_US
dc.subjectTitanium dioxideen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectX ray spectroscopyen_US
dc.subjectBlocking capabilityen_US
dc.subjecte-Beam lithographyen_US
dc.subjectEnergy dispersive X ray spectroscopyen_US
dc.subjectInductively coupled plasma (ICP)en_US
dc.subjectPolyvinyl pyrrolidoneen_US
dc.subjectSelective depositionen_US
dc.subjectSelective-area atomic layer depositionen_US
dc.subjectTetrakis(dimethylamido)titaniumen_US
dc.subjectAtomic layer depositionen_US
dc.titleNanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymersen_US
dc.typeArticleen_US
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Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)