Determination of the LO phonon energy by using electronic and optical methods in AIGaN/GaN

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage491en_US
dc.citation.issueNumber2en_US
dc.citation.spage485en_US
dc.citation.volumeNumber10en_US
dc.contributor.authorCelik, O.en_US
dc.contributor.authorTiras, E.en_US
dc.contributor.authorArdali, S.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:01:10Z
dc.date.available2015-07-28T12:01:10Z
dc.date.issued2012en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.en_US
dc.identifier.doi10.2478/s11534-011-0100-xen_US
dc.identifier.issn1895-1082
dc.identifier.urihttp://hdl.handle.net/11693/12373
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttp://dx.doi.org/10.2478/s11534-011-0100-xen_US
dc.source.titleCentral European Journal of Physicsen_US
dc.subjectHall Effecten_US
dc.subjectLo phonon energyen_US
dc.subjectAlGan/Ganen_US
dc.subjectRaman spectraen_US
dc.subjectInfrared spectraen_US
dc.titleDetermination of the LO phonon energy by using electronic and optical methods in AIGaN/GaNen_US
dc.typeArticleen_US
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Department of Physics
Department of Electrical and Electronics Engineering
Nanotechnology Research Center (NANOTAM)