Using GaAs Monolithic Microwave Integrated Circuit (MMIC) technology three distributed amplifiers are realized. Two of these amplifiers employ single gate FETs and operate in the 2-18 GHz frequency range. They have 4.5 and 6.5 dB gain, respectively. The third amplifier utilizes cascode connected FETs. This amplifier operates in the 2-20 GHz range and has a gain of ~10 dB. All the three amplifiers have input and output return losses better than 10 dB. The isolation of the amplifiers with single gate FETs is better than 20 dB, whereas the cascode connection improves the isolation over 30 dB. The amplifiers are designed for a 50O-svstem. The simulations are made linearly, and the results match the theoretical work. In the design of these amplifiers a more detailed method is used in which the artificial transmission lines are investigated and optimized in their frequency behaviour. Besides, to realize these amplifiers, a new parametrized cell library for GEC-Marconi’s F20 foundry process is created and utilized.