Characterization of AlInN/AlN/GaN heterostructures with different AlN buffer thickness

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage3284en_US
dc.citation.issueNumber7en_US
dc.citation.spage3278en_US
dc.citation.volumeNumber45en_US
dc.contributor.authorÇörekçi, S.en_US
dc.contributor.authorDugan, S.en_US
dc.contributor.authorÖztürk, M. K.en_US
dc.contributor.authorÇetin, S. Ş.en_US
dc.contributor.authorÇakmak, M.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2018-04-12T10:56:40Z
dc.date.available2018-04-12T10:56:40Z
dc.date.issued2016en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractTwo AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and Hall-effect measurements. The symmetric (0002) plane with respect to the asymmetric (101 ¯ 2) plane in the 280-nm-thick AlN buffer has a higher crystal quality, as opposed to the 400-nm-thick buffer. The thinner buffer improves the crystallinity of both (0002) and (101 ¯ 2) planes in the GaN layers, it also provides a sizeable reduction in dislocation density of GaN. Furthermore, the lower buffer thickness leads to a good quality surface with an rms roughness of 0.30 nm and a dark spot density of 4.0 × 108 cm−2. The optical and transport properties of the AlInN/AlN/GaN structure with the relatively thin buffer are compatible with the enhancement in its structural quality, as verified by XRD and AFM results.en_US
dc.identifier.doi10.1007/s11664-016-4536-zen_US
dc.identifier.issn0361-5235
dc.identifier.urihttp://hdl.handle.net/11693/36890
dc.language.isoEnglishen_US
dc.publisherSpringer New York LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s11664-016-4536-zen_US
dc.source.titleJournal of Electronic Materialsen_US
dc.subjectAlInN barrieren_US
dc.subjectAlInN/AlN/GaN HEMTen_US
dc.subjectAlN bufferen_US
dc.subjectAtomic force microscopyen_US
dc.subjectDislocations (crystals)en_US
dc.subjectGallium nitrideen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectOrganic chemicalsen_US
dc.subjectOrganometallicsen_US
dc.subjectSapphireen_US
dc.subjectVapor depositionen_US
dc.subjectX ray diffractionen_US
dc.subjectA3. metal organic chemical vapor deposition (MOCVD)en_US
dc.subjectDislocation densitiesen_US
dc.subjectHall effect measurementen_US
dc.subjectSapphire substratesen_US
dc.subjectStructural qualitiesen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.titleCharacterization of AlInN/AlN/GaN heterostructures with different AlN buffer thicknessen_US
dc.typeArticleen_US
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