Effect of cross-sectional geometry on the RPA plasmons of quantum wires

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buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage950en_US
dc.citation.issueNumber12en_US
dc.citation.spage947en_US
dc.citation.volumeNumber92en_US
dc.contributor.authorBennett, C. R.en_US
dc.contributor.authorTanatar, Bilalen_US
dc.contributor.authorConstantinou, N. C.en_US
dc.contributor.authorBabiker, M.en_US
dc.date.accessioned2016-02-08T10:53:23Z
dc.date.available2016-02-08T10:53:23Z
dc.date.issued1994en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe effect of cross-sectional geometry on both the intrasubband plasmon and intersubband plasmon of a quantum wire is investigated within a two-subband RPA scheme. Exact analytical electronic wavefunctions for circular, elliptical and rectangular wires are employed within the infinite barrier approximation. It is found that for fixed cross-sectional area and linear electron concentration, the intrasubband plasmon energy is only marginally dependent on the wire geometry whereas the intersubband plasmon energy may change considerably due to its dependence on the electronic subband energy difference. © 1994.en_US
dc.identifier.doi10.1016/0038-1098(94)90018-3en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/25987
dc.language.isoEnglishen_US
dc.publisherPergamon Pressen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/0038-1098(94)90018-3en_US
dc.source.titleSolid State Communicationsen_US
dc.subjectA. nanostructuresen_US
dc.subjectA. semiconductorsen_US
dc.subjectD. dielectric responseen_US
dc.subjectApproximation theoryen_US
dc.subjectElectromagnetic dispersionen_US
dc.subjectElectromagnetic wavesen_US
dc.subjectElectron energy levelsen_US
dc.subjectGeometryen_US
dc.subjectMathematical modelsen_US
dc.subjectMatrix algebraen_US
dc.subjectQuantum theoryen_US
dc.subjectSemiconductor device structuresen_US
dc.subjectWaveform analysisen_US
dc.subjectCross sectional geometryen_US
dc.subjectDielectric responseen_US
dc.subjectElectronic subband energy differenceen_US
dc.subjectElectronic wavefunctionsen_US
dc.subjectFixed cross sectional areaen_US
dc.subjectInfinite barrier approximationen_US
dc.subjectLinear electron concentrationen_US
dc.subjectPlasmonsen_US
dc.subjectQuantum wiresen_US
dc.subjectSemiconductor quantum wellsen_US
dc.titleEffect of cross-sectional geometry on the RPA plasmons of quantum wiresen_US
dc.typeArticleen_US
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