Fabrication and characterization of amorphous silicon microcavities

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buir.advisorSerpengüzel, Ali
dc.contributor.authorTanriseven, Selim
dc.date.accessioned2016-01-08T20:16:20Z
dc.date.available2016-01-08T20:16:20Z
dc.date.issued1999
dc.departmentDepartment of Physicsen_US
dc.descriptionAnkara : Department of Physics and Institute of Engineering and Science,Bilkent Univ., 1999.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 1999.en_US
dc.descriptionIncludes bibliographical references leaves 57-60en_US
dc.description.abstractIn this thesis, planar amorphous silicon microcavities were fabricated and characterized at room temperature. Microcavities were realized by embedding the active amorphous silicon layer between distributed Bragg reflectors, which are composed of alternating silicon oxide and silicon nitride layers. All of the layers were grown by plasma enhanced chemical vapor deposition on silicon substrates. By tuning the cavity mode to emission maximum of amorphous silicon, a narrow and enhanced emission line is obtained. Device characterization was done by means of photoluminescence, and reflectance measurements. The experimental results compare favorably with the theoretical calculations performed by transfer matrix method.en_US
dc.description.degreeM.S.en_US
dc.description.statementofresponsibilityTanriseven, Selimen_US
dc.format.extent60 leaves, illustrationsen_US
dc.identifier.urihttp://hdl.handle.net/11693/18106
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMicrocavityen_US
dc.subjectDistributed Bragg Reflectoren_US
dc.subjectThin Filmen_US
dc.subjectFabryPeroten_US
dc.subjectQuality Factoren_US
dc.subject.lccQC611.8.A38 T36 1999en_US
dc.subject.lcshAmorphous semiconductors.en_US
dc.subject.lcshOptoelectronics.en_US
dc.subject.lcshResonance.en_US
dc.titleFabrication and characterization of amorphous silicon microcavitiesen_US
dc.typeThesisen_US
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