Electro-optic modulation of InAs quantum dot waveguides
Date
2008
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Source Title
Proceedings of the 14th European Conference on Integrated Optics, ECIO 2008
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Publisher
Technische Universiteit Eindhoven
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Pages
185 - 188
Language
English
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Abstract
The linear electro-optic properties in waveguides containing self-organized In As quantum dots were studied experimentally. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs.