Effect of disorder on the ground-state properties of graphene

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buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage125432-6en_US
dc.citation.issueNumber12en_US
dc.citation.spage125432-1en_US
dc.citation.volumeNumber77en_US
dc.contributor.authorAsgari, R.en_US
dc.contributor.authorVazifeh, M. M.en_US
dc.contributor.authorRamezanali, M. R.en_US
dc.contributor.authorDavoudi, E.en_US
dc.contributor.authorTanatar, Bilalen_US
dc.date.accessioned2016-02-08T10:09:45Z
dc.date.available2016-02-08T10:09:45Z
dc.date.issued2008en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe calculate the ground-state energy of Dirac electrons in graphene in the presence of disorder. We take randomly distributed charged impurities at a fixed distance from the graphene sheet and surface fluctuations (ripples) as the main scattering mechanisms. A mode-coupling approach to the scattering rate and random-phase approximation for the ground-state energy incorporating the many-body interactions and the disorder effects yields good agreement with the experimental inverse compressibility.en_US
dc.identifier.doi10.1103/PhysRevB.77.125432en_US
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/11693/23161
dc.language.isoEnglishen_US
dc.publisherThe American Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.77.125432en_US
dc.source.titlePhysical Review B - Condensed Matter and Materials Physicsen_US
dc.titleEffect of disorder on the ground-state properties of grapheneen_US
dc.typeArticleen_US
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