Microstructural defect properties of InGaN/GaN blue light emitting diode structures

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage3932en_US
dc.citation.issueNumber9en_US
dc.citation.spage3924en_US
dc.citation.volumeNumber25en_US
dc.contributor.authorBas, Y.en_US
dc.contributor.authorDemirel, P.en_US
dc.contributor.authorAkin, N.en_US
dc.contributor.authorBaşköse, C.en_US
dc.contributor.authorÖzen, Y.en_US
dc.contributor.authorKınacı, B.en_US
dc.contributor.authorÖztürk, M. K.en_US
dc.contributor.authorÖzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:01:34Z
dc.date.available2015-07-28T12:01:34Z
dc.date.issued2014-06-28en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this paper, we study structural and morphological properties of metal-organic chemical vapour deposition-grown InGaN/GaN light emitting diode (LED) structures with different indium (In) content by means of high-resolution X-ray diffraction, atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL) and current-voltage characteristic (I-V). We have found out that the tilt and twist angles, lateral and vertical coherence lengths of mosaic blocks, grain size, screw and edge dislocation densities of GaN and InGaN layers, and surface roughness monotonically vary with In content. Mosaic defects obtained due to temperature using reciprocal lattice space map has revealed optimized growth temperature for active InGaN layer of MQW LED. It has been observed in this growth temperature that according to AFM result, LED structure has high crystal dimension, and is rough whereas according to PL and FTIR results, bandgap energy shifted to blue, and energy peak half-width decreased at high values. According to I-V measurements, it was observed that LED reacted against light at optimized temperature. In conclusion, we have seen that InGaN MQW structure's structural, optical and electrical results supported one another.en_US
dc.identifier.doi10.1007/s10854-014-2108-7en_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11693/12454
dc.language.isoEnglishen_US
dc.publisherSpringer USen_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s10854-014-2108-7en_US
dc.source.titleJournal of Materials Science: Materials in Electronicsen_US
dc.subjectX-ray-diffractionen_US
dc.subjectChemical-vapor-depositionen_US
dc.subjectGan Filmsen_US
dc.subjectDislocation Densitiesen_US
dc.subjectImperfectionsen_US
dc.subjectSubstrateen_US
dc.subjectEmissionen_US
dc.subjectSingleen_US
dc.titleMicrostructural defect properties of InGaN/GaN blue light emitting diode structuresen_US
dc.typeArticleen_US
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